Hybrid Semiconductor Magnetic Device Stacked Integration
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Solution Overview
Problem
The integration of semiconductor and magnetic devices in a single system is limited by separate design and development processes, leading to constraints in interaction and larger form factors, with semiconductor devices consuming significant real estate due to volatile memory requirements.
Innovation Solution
A hybrid platform is developed, where semiconductor and magnetic devices are combined in a single package, with semiconductor devices forming processing elements and magnetic devices providing non-volatile memory, allowing for improved performance and reduced size through stacked integration and advanced interconnects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If semiconductor devices use volatile memory (SRAM) for on-board cache, then processing speed is improved, but device real estate is significantly consumed (up to 40%)
Solution Approach 1:
The patent segments memory functionality across multiple devices within a single package: volatile memory (SRAM) is placed on a semiconductor die for high-speed caching, while non-volatile memory is placed on a magnetic die for persistent storage. This segmentation allows each memory type to be optimized for its specific function while sharing the same package footprint, effectively reducing the real estate burden on the semiconductor device alone.
Solution Approach 2:
The patent transitions from a single-die two-dimensional layout to a multi-die three-dimensional stacked architecture. By stacking the semiconductor die and magnetic die vertically within a single package, the system achieves higher memory capacity and faster access speeds without increasing the lateral footprint, effectively utilizing the vertical dimension to resolve the real estate constraint.
2Manufacturing precision
If semiconductor and magnetic devices are formed separately using different processes, then manufacturing precision is maintained for each device type, but device complexity increases and interaction is limited
Solution Approach 1:
The patent merges previously separate semiconductor and magnetic devices into a single integrated package. The semiconductor die and magnetic die are fabricated separately using their respective optimized processes, then combined through advanced packaging techniques with integrated interconnects. This merging maintains the manufacturing precision benefits of separate fabrication while enabling direct interaction and reducing overall system complexity.
Solution Approach 2:
The patent introduces advanced interconnect structures as intermediaries between the semiconductor die and magnetic die. These interconnects serve as mediators that enable efficient data transfer and interaction between the two differently-fabricated devices, allowing them to function as a unified system while preserving the benefits of separate manufacturing processes.
3Adaptability or versatility
If disparate devices are joined by off-chip interconnects, then device modularity is maintained, but form factor increases and performance is reduced
Solution Approach 1:
The patent implements a nested architecture where the magnetic die is positioned adjacent to and integrated with the semiconductor die within a single package. The devices are nested in close proximity with direct interconnects, eliminating the need for external off-chip connections. This nested arrangement maintains the modularity benefits of separate devices while dramatically reducing the overall form factor and improving performance through shorter signal paths.
4Speed
If volatile memory is used for on-board cache, then processing elements have fast access to data, but data is lost when power is removed
Solution Approach 1:
The patent segments memory functionality into two distinct components: volatile memory (SRAM) on the semiconductor die for high-speed data access during active processing, and non-volatile memory on the magnetic die for persistent data retention. This segmentation allows the system to simultaneously achieve fast data access when powered and data preservation when powered down, with each memory type optimized for its specific role.
Solution Approach 2:
The patent implements preliminary action by using the non-volatile magnetic memory to pre-store data that can be rapidly loaded into the volatile SRAM cache upon system startup. This preliminary storage of data in non-volatile memory ensures that frequently accessed data is already available for immediate processing, reducing startup time and maintaining fast access performance while ensuring data persistence.
Data Source
AI summary
In one embodiment, the present invention includes a hybrid device having a first die including a semiconductor device and a second die coupled to the first die, where the second die includes a magnetic structure. The first die may be a semiconductor substrate, while the second die may be a magnetic substrate, and the first die may be stacked on the second die, in one embodiment. Other embodiments are described and claimed.