Hybrid Silicon-Oxide TFT Display Structure for Dense Integration
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Solution Overview
Problem
Display apparatuses face challenges in achieving high integration density, low power consumption, and reduced process time and cost due to the increasing number of thin film transistors required for accurate luminescence control.
Innovation Solution
The display apparatus incorporates a first thin film transistor with a silicon semiconductor and a second thin film transistor with an oxide semiconductor, along with a storage capacitor design that overlaps and shares layers with the transistors, reducing material and process complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of thin film transistors is increased to accurately control luminescence intensities, then display device control precision is improved, but integration density and process efficiency deteriorate
Solution Approach 1:
The patent merges the storage capacitor structure with the thin film transistor structure by sharing common elements. Specifically, the storage capacitor's lower electrode is combined with the transistor's source/drain region, and the upper electrode is integrated with the gate electrode structure. This merging reduces the total number of separate components while maintaining the required luminescence control functionality through the coordinated operation of the integrated structures.
Solution Approach 2:
The storage capacitor structure is designed to serve multiple functions simultaneously. The lower electrode acts as both a capacitor electrode and a transistor source/drain region, while the upper electrode serves as both a capacitor electrode and a gate electrode. This multi-functionality allows the system to achieve accurate luminescence control with fewer discrete components, thereby improving integration density.
2Measurement precision
If the number of thin film transistors is increased for accurate luminescence control, then control precision is improved, but power consumption increases
Solution Approach 1:
By merging the storage capacitor with the thin film transistor structure, the patent reduces the total number of active components that consume power. The integrated structure eliminates redundant interconnects and reduces leakage current paths, thereby lowering overall power consumption while maintaining the precision of luminescence control through the coordinated operation of the shared components.
Solution Approach 2:
The multi-functional storage capacitor-transistor structure reduces the total component count, which directly reduces the cumulative power consumption of the display device. The shared electrodes and conductive regions minimize the number of separate power-consuming elements while preserving the control precision needed for accurate luminescence intensity regulation.
3Measurement precision
If the number of thin film transistors is increased, then luminescence control capability is improved, but process time and manufacturing cost increase
Solution Approach 1:
The patent applies merging by combining the storage capacitor formation steps with the thin film transistor fabrication steps. Common conductive layers and insulating structures are formed simultaneously for both the transistor and capacitor, eliminating sequential processing steps. This integrated approach reduces the total process time while maintaining the luminescence control capability through the coordinated design of the merged structures.
Solution Approach 2:
The multi-functional design allows a single fabrication process to create components serving multiple purposes. The shared conductive regions and insulating layers are formed in unified processing steps, reducing the overall manufacturing cycle time. This approach maintains luminescence control capability while significantly reducing process time and manufacturing complexity.
4Measurement precision
If more materials and layers are used to increase transistor count, then control precision is improved, but manufacturing cost increases
Solution Approach 1:
The patent merges materials and layers between the storage capacitor and thin film transistor structures. Common conductive materials and insulating layers are shared between the two components, reducing the total material inventory and simplifying the manufacturing process. This merging approach maintains control precision while reducing manufacturing cost through material efficiency and process simplification.
Solution Approach 2:
The multi-functional design enables a single material layer to serve multiple purposes across different components. Conductive materials form both transistor electrodes and capacitor electrodes, while insulating layers provide both gate isolation and capacitor dielectric functions. This universality reduces material costs and manufacturing complexity while preserving the precision of luminescence control.
Data Source
AI summary
A display apparatus includes a substrate including a display area; a first thin film transistor arranged on the display area of the substrate and having a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer by a first gate insulating layer; a second thin film transistor arranged on the display area of the substrate and having a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer; and a storage capacitor at least partially overlapping the first thin film transistor and having a lower electrode and an upper electrode, wherein the second semiconductor layer and one of the lower electrode and the upper electrode are arranged on a same layer.