Hybrid SLC-MLC Storage Buffer for Faster Write Operations
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Solution Overview
Problem
Existing semiconductor storage devices face challenges in achieving fast write and read speeds, particularly in nonvolatile memory devices like flash memory, where data transfer operations are often limited by the inherent characteristics of multi-level cell configurations.
Innovation Solution
The implementation of a turbo write buffer using single-level cells (SLC) within the storage device, which accelerates write operations by preferentially storing data in a high-speed SLC buffer area before transferring it to multi-level cell (MLC) storage, combined with a logical unit dedicated or shared buffer configuration to optimize data management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multi-level cell (MLC) configuration is used to increase storage capacity, then storage capacity is improved, but write speed deteriorates
Solution Approach 1:
The storage device is segmented into two distinct buffer areas: a first buffer area implemented with single-level cell (SLC) memory cells for high-speed write operations, and a second buffer area implemented with multi-level cell (MLC) memory cells for high-capacity storage. This segmentation allows the system to simultaneously achieve fast write speeds through the SLC portion and high storage capacity through the MLC portion, resolving the contradiction between write speed and storage capacity.
2Speed
If single-level cell (SLC) buffer area is used to increase write speed, then write speed is improved, but storage capacity deteriorates
Solution Approach 1:
The patent merges two different memory cell configurations (SLC and MLC) into a single storage device, creating a hybrid buffer system where the SLC buffer area provides high-speed write capability and the MLC buffer area provides high storage capacity. By combining these two complementary technologies, the system achieves both fast write speeds and large storage capacity, resolving the contradiction between write speed and storage capacity.
3Quantity of substance
If data is directly written to MLC storage, then storage capacity is utilized efficiently, but write performance deteriorates
Solution Approach 1:
The system performs preliminary write operations by first storing incoming data in the high-speed SLC buffer area before transferring it to the MLC buffer area for long-term storage. This preliminary action in the SLC buffer allows data to be written at high speeds initially, and then the data is gradually moved to the MLC buffer, thereby improving overall write performance while still utilizing the full storage capacity of the MLC region.
Data Source
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Figure 3A~3B
Figure 4A
AI summary
A storage device includes a nonvolatile memory device that includes a first area, a second area, and a third area, and a controller that receives a write command and first data from a host device, preferentially writes the first data in the first area or the second area rather than the third area when the first data is associated with a turbo write, and writes the first data in the first area, the second area, or the third area when the first data is associated with a normal write. The controller moves second data between the first area, the second area, and the third area based on the policy received from the host device.