Hybrid and Solder Bonded IC Die Stacking for Heterogeneous Integration
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Solution Overview
Problem
Monolithic integrated circuit (IC) fabrication limitations lead to challenges in integrating multiple IC dies into a single IC package, such as combining heterogeneous silicon processes or small dis-aggregated IC dies, which restricts performance and efficiency.
Innovation Solution
The use of hybrid bonding techniques to fuse metal features within an insulator of one IC die with metal features within another, allowing for the creation of hybrid bonded die stacks that can be coupled via solder bonding, enabling the integration of multiple dies into a package with dimensions similar to a single monolithic die, thereby increasing the number of dies within a package of the same size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If monolithic IC fabrication is used, then manufacturing simplicity is maintained, but the number of dies in a package and performance are limited
Solution Approach 1:
The invention divides the monolithic die structure into multiple separate IC dies that are stacked vertically. Each die can be fabricated independently using existing processes, then combined through hybrid bonding to form a multi-die package that achieves higher productivity while maintaining manufacturing simplicity through modular assembly
Solution Approach 2:
The invention transitions from a planar (2D) monolithic die layout to a three-dimensional stacked configuration. By stacking multiple dies vertically in the Z-dimension, the package accommodates twice the number of dies within a similar footprint, effectively doubling productivity without proportionally increasing device complexity
2Adaptability or versatility
If heterogeneous silicon processes are combined, then performance and flexibility are enhanced, but integration difficulty increases
Solution Approach 1:
The invention segments the heterogeneous integration into separate IC dies fabricated using different silicon processes. Each die maintains its process-specific characteristics while being combined through standardized hybrid bonding interfaces, enabling versatile heterogeneous integration without overwhelming manufacturing complexity
Solution Approach 2:
The invention uses hybrid bonding as an intermediary mechanism that bridges different heterogeneous silicon processes. The bonding process accommodates variations in die materials and fabrication processes while providing a standardized interface for integration, thereby enhancing adaptability without proportionally increasing ease of manufacture
3Productivity
If die stacking is implemented, then the number of dies per package is doubled, but bonding process complexity increases
Solution Approach 1:
The invention merges hybrid bonding and solder bonding processes into a unified die stacking methodology. By combining the precision of hybrid bonding for metal-to-metal alignment with the robustness of solder bonding for final attachment, the process achieves doubled dies per package while managing bonding complexity through process integration
Solution Approach 2:
The invention employs composite bonding approaches that combine different bonding mechanisms (hybrid bonding for initial alignment, solder bonding for final attachment). This composite methodology leverages the advantages of each bonding type to achieve high-density stacking while controlling overall process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for customizable die stacks with twice the number of dies in a package compared to traditional monolithic die stacks, maintaining compatibility with existing manufacturing processes and enabling efficient assembly into a base die, enhancing performance and flexibility in product types like graphics and client computing.
Implementation Method 1
hybrid bonding techniques to fuse metal features within an insulator of one IC die with metal features within another
Implementation Method 2
coupled via solder bonding, enabling the integration of multiple dies into a package
Data Source
AI summary
A packaged device comprises first die stack and a third die. The first die stack includes a first die comprising first conductive contacts each at a first side of the first die, and a second die comprising second conductive contacts each at a second side of the second die. First solder bonds which each extend to a respective one of the first conductive contacts. The third die comprises third conductive contacts each at a third side of the third die. The third die is coupled to the first die stack via second solder bonds which each extend to a respective one of the second conductive contacts, and to a respective one of the third conductive contacts. Each die of the first die stack is coupled to each of a respective one or more other dies of the first die stack via respective hybrid bonds.