Hybrid Semiconductor Substrate for CTE-Matched Chip Integration
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Solution Overview
Problem
Current semiconductor packaging materials and processes struggle to meet the demands of high-performance computing due to challenges in ensuring seamless communication, efficient high-density routing, and effective integration of active and passive components onto substrates, primarily due to thermal expansion mismatches.
Innovation Solution
The development of hybrid semiconductor substrates with an asymmetric configuration, combining the interposer-like structure with organic substrate-like features, which closely matches the coefficient of thermal expansion (CTE) of silicon IC chips, thereby reducing thermal stress and enhancing structural reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor packaging materials and processes are used, then manufacturing simplicity is maintained, but thermal expansion mismatch causes warpage and reduces reliability
Solution Approach 1:
The patent applies composite materials by creating a hybrid substrate that combines an organic substrate with a silicon interposer. The organic substrate provides mechanical support and electrical interconnection, while the silicon interposer provides a coefficient of thermal expansion (CTE) that closely matches silicon IC chips (ratio ≥ 3:5). This composite structure resolves the thermal expansion mismatch problem while maintaining manufacturing feasibility through established processes.
Solution Approach 2:
The patent applies local quality by providing different regions of the substrate with different material properties. The silicon interposer is strategically positioned to contact the silicon IC chip, providing localized CTE matching where it is most needed, while the organic substrate provides overall structural support and electrical interconnection in other regions. This allows each region to optimize for its specific function.
2Adaptability or versatility
If heterogeneous integration is implemented to meet high-performance computing demands, then integration capability is improved, but thermal stress and warpage increase due to CTE mismatch
Solution Approach 1:
The hybrid substrate uses a composite structure where the silicon interposer acts as a thermal buffer between the silicon IC chip and the organic substrate. The silicon interposer's CTE closely matches the silicon IC chip, minimizing thermal stress during temperature cycling, while still enabling heterogeneous integration of different device types on the organic substrate portion.
Solution Approach 2:
The silicon interposer serves as an intermediary layer between the silicon IC chip and the organic substrate. It mediates the thermal expansion difference by providing a CTE that closely matches the silicon IC chip, thereby reducing thermal stress transmitted to the organic substrate and preventing warpage while enabling the heterogeneous integration architecture.
3Productivity
If high-density routing is achieved through advanced packaging, then communication efficiency is improved, but manufacturing precision requirements increase
Solution Approach 1:
The organic substrate portion of the hybrid substrate provides universal electrical interconnection capabilities through its conductive layers and vias, enabling high-density routing for heterogeneous devices. The established manufacturing processes for organic substrates allow for precise routing patterns while maintaining manufacturing feasibility, supporting efficient communication between integrated devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables improved yield and reliability by minimizing warpage and thermal stress, while also facilitating high-density routing and efficient integration of both active and passive components, thus addressing the limitations of existing semiconductor packaging technologies.
Implementation Method 1
the substrate being characterized by a second coefficient of thermal expansion, the third layer being characterized by a third coefficient of thermal expansion, the third coefficient of thermal expansion being associated with the second coefficient of thermal expansion; wherein a ratio of the first coefficient of thermal expansion to the second coefficient of thermal expansion is greater than or equal to 3:5
Data Source
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AI summary
The subject technology is directed to semiconductor devices and manufacturing methods. In various embodiments, the subject technology provides a semiconductor device, which comprises a first circuit characterized by a first coefficient of thermal expansion (CTE) and a substrate characterized by a second CTE. A ratio of the first CTE to the second CTE is greater than or equal to 3:5, which ensures harmonious thermal behavior, leading to improved yield and reduced warpage. In some implementations, one or more circuit elements may be embedded in the substrate. There are other embodiments as well.