Hybrid Semiconductor Substrate With Dual-Side IPDs on One Wafer
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Solution Overview
Problem
The existing manufacturing process for semiconductor devices requires separate wafers for active and passive components, leading to increased costs due to the need for additional high-resistivity silicon wafers for integrated passive devices (IPDs), which complicates the stacking and side-by-side arrangement of active and wire bond IPDs.
Innovation Solution
A hybrid substrate is formed by integrating IPDs on both sides of a single semiconductor wafer, reducing the number of wafers needed and simplifying the manufacturing process by using a single wafer to create both active devices and IPDs, thereby decreasing manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If separate wafers are used for active devices and IPDs, then electrical characteristics are improved, but manufacturing cost increases
Solution Approach 1:
The patent merges the fabrication of active devices and IPDs onto a single wafer. The method forms IPDs directly over active semiconductor regions on the same wafer, eliminating the need for separate high-resistivity silicon wafers. This combining approach maintains the electrical performance benefits of separate wafer processing while reducing manufacturing complexity and cost associated with handling multiple wafers.
Solution Approach 2:
The single wafer serves multiple functions: it acts as both the substrate for active semiconductor devices and the substrate for fabricating integrated passive devices. The wafer structure is designed to accommodate both types of devices simultaneously, with IPDs formed over active regions, thereby making the wafer a multi-functional platform that eliminates the need for dedicated separate wafers.
2Reliability
If separate wafers are used for active devices and IPDs, then device performance is maintained, but process complexity increases
Solution Approach 1:
The patent combines the fabrication processes for active devices and IPDs into a single integrated process flow on one wafer. By forming IPDs directly over active semiconductor regions, the method eliminates the complex steps of handling, aligning, and processing separate wafers, thereby reducing process complexity while maintaining device performance through proper structural design.
3Ease of manufacture
If additional high-resistivity silicon wafers are used for IPDs, then IPD fabrication is enabled, but wafer quantity increases
Solution Approach 1:
The patent eliminates the need for additional high-resistivity silicon wafers by forming IPDs directly on the existing active semiconductor wafer. The method utilizes the same wafer substrate for both active device fabrication and IPD creation, thereby reducing wafer quantity from multiple separate wafers to a single multi-functional wafer while maintaining full IPD fabrication capability.
Data Source
AI summary
A semiconductor device has a semiconductor wafer with a plurality of semiconductor die. The semiconductor wafer has a low resistivity. An insulating layer is formed over the semiconductor wafer. A first IPD is formed over the insulating layer. The first IPD can be a capacitor, resistor, or inductor. A second IPD is formed over a second surface of the semiconductor wafer opposite the first surface of the semiconductor wafer. An interconnect structure is formed over the first IPD. An interconnect substrate is provided with the semiconductor die disposed over the interconnect substrate. A bond wire is formed between the interconnect structure and the interconnect substrate. Alternatively, an active device is formed in a second surface of the semiconductor die opposite the first surface of the semiconductor die. The semiconductor die incorporates the hybrid substrate to allow IPD and active devices to be formed from a single substrate.