Hybrid Superconducting-Magnetic Memory Cell Architecture
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Solution Overview
Problem
The development of superconducting technology for general-purpose computing is hindered by the lack of dense, fast, and high-capacity random access memory (RAM) that can be interfaced with superconducting logic without complex level-translation circuits, which dissipate power and introduce significant delay.
Innovation Solution
A hybrid superconducting-magnetic memory cell and array are developed, comprising a magnetoresistive element, such as a magnetic tunnel junction, wired in parallel with a superconducting element, like a Josephson junction, to form a memory array that eliminates the need for complex level-translation circuits by using word and bit lines to isolate and access memory cells efficiently.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If hybrid chip technology integrates superconducting logic circuits with dense memory storage elements, then processing speed is improved, but power dissipation increases due to complex level-translation circuits
Solution Approach 1:
The patent extracts and eliminates the complex level-translation circuits from the hybrid chip architecture. By directly interfacing superconducting logic circuits with magnetoresistive memory elements through superconducting word and bit lines, the invention removes the intermediary conversion stages that caused power dissipation, while maintaining the benefits of integrating fast superconducting logic with dense memory storage
Solution Approach 2:
The patent merges the superconducting logic circuit domain with the memory storage domain by using superconducting wiring to directly connect Josephson junction logic to magnetoresistive memory elements. This integration eliminates the need for separate level-translation circuitry and enables direct control of memory cells by superconducting logic, reducing overall system power consumption
2Speed
If hybrid chip technology integrates superconducting logic circuits with dense memory storage elements, then processing speed is improved, but access time increases due to complex level-translation circuits
Solution Approach 1:
The patent removes the level-translation circuits that introduced significant delay to memory access time. By enabling direct control of magnetoresistive memory elements through superconducting word and bit lines, the invention eliminates the multi-stage conversion process and reduces access time to match the fast switching capability of superconducting logic
Solution Approach 2:
The patent applies preliminary action by pre-charging superconducting bit lines and preparing word lines for selection before memory access operations. This preparatory configuration of the superconducting circuitry enables faster switching and reduces the overall access time by eliminating setup delays associated with level translation
3Adaptability or versatility
If complex level-translation circuits are used to interface superconducting logic with memory arrays, then voltage level compatibility is achieved, but device complexity increases
Solution Approach 1:
The patent merges the superconducting voltage domain with the memory control domain by using superconducting word and bit lines to directly control magnetoresistive memory elements. This approach eliminates the need for separate level-translation circuitry and reduces overall system complexity while maintaining voltage level compatibility through the inherent properties of superconducting circuits
Solution Approach 2:
The patent makes the superconducting word and bit lines multi-functional by using them both for logic operations and for direct memory cell control. This universal use of superconducting wiring eliminates the need for dedicated level-translation circuits, simplifying the overall device architecture while maintaining compatibility between superconducting logic and memory elements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables reliable and efficient writing and reading of memory cells with reduced power dissipation and access time, effectively addressing the limitations of existing memory solutions for superconducting technology.
Implementation Method 1
a magnetoresistive element, such as a magnetic tunnel junction
Implementation Method 2
a superconducting element, like a Josephson junction
Implementation Method 3
fast Josephson logic circuits
Data Source
AI summary
In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.