Hybrid TFT Display Layout for S-Factor and Current Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing display apparatuses face challenges in optimizing the s-factor value at or below threshold voltage for thin-film transistors, which affects the performance and reliability of electroluminescent displays, particularly in polysilicon and oxide semiconductor transistors formed on the same substrate.
Innovation Solution
The display apparatus is designed with differently configured gate electrodes, insulating layers, and source/drain structures for polysilicon and oxide semiconductor transistors, including varying the number of layers and materials to optimize the s-factor value based on the transistor's location and characteristics, thereby enhancing the performance of thin-film transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If polysilicon thin-film transistors and oxide semiconductor thin-film transistors are formed on the same substrate with identical structures, then manufacturing complexity is reduced, but transistor performance and reliability deteriorate due to varying s-factor requirements at different locations
Solution Approach 1:
The patent applies local quality by configuring different transistor structures at different locations on the substrate. Specifically, transistors in the first region have a first structure while transistors in the second region have a second structure, allowing each region to be optimized for its specific performance requirements. This resolves the contradiction by accepting increased device complexity to achieve the necessary reliability and performance variation across different transistor locations.
2Reliability
If different transistor structures are used to optimize s-factor at different locations, then transistor reliability improves, but manufacturing complexity and process difficulty increase
Solution Approach 1:
The patent segments the substrate into distinct regions (first region and second region) with different transistor structures. This segmentation allows independent optimization of transistor characteristics in each region while maintaining a systematic approach to manufacturing. The segmentation principle resolves the contradiction by organizing the complexity into manageable, region-specific configurations rather than requiring entirely different manufacturing processes.
3Ease of manufacture
If uniform transistor structures are used across the substrate, then manufacturing process is simplified, but screen defects increase due to insufficient optimization for location-specific characteristics
Solution Approach 1:
By implementing local quality through region-specific transistor structures, the patent optimizes transistor performance for each location's specific characteristics. This reduces screen defects caused by insufficient optimization while maintaining a structured manufacturing approach. The local quality principle directly addresses the contradiction by tailoring transistor structures to local requirements rather than applying a uniform design everywhere.
Data Source
AI summary
A display apparatus can include a first thin-film transistor including a first active layer having a first polysilicon material, a first gate electrode overlapping the first active layer, a first electrode and a second electrode; a second thin-film transistor including a second active layer having an oxide semiconductor, a second gate electrode overlapping the second active layer, a third electrode and a fourth electrode; and a first emitting electrode of a light emitting element electrically connected to the second electrode of the first thin-film transistor. Also, one end of the first active layer having the first polysilicon material is electrically connected to one or the other end of the second active layer having the oxide semiconductor.