Hybrid Silicon-Oxide TFT Display Layout for Low-Power Light Control
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Solution Overview
Problem
Current display apparatuses face challenges in increasing integration and reducing power consumption due to the limited control over light emission in display devices, particularly with the increasing number of thin film transistors (TFTs) required for accurate light control.
Innovation Solution
The display apparatus incorporates a combination of silicon semiconductor and oxide semiconductor TFTs, with specific layer structures and contact hole configurations that allow for efficient electrical connections between TFTs, including a silicon semiconductor layer with a gate electrode acting as a lower electrode for a storage capacitor, and an oxide semiconductor layer extending into contact holes to connect with silicon semiconductor layers, enhancing integration and reducing power consumption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of TFTs is increased to accurately control light emission, then light emission control precision is improved, but device complexity and power consumption increase
Solution Approach 1:
The patent divides TFTs into two functional segments: silicon-based TFTs for switching control and oxide semiconductor TFTs for light emission control. This segmentation allows each type to specialize in its optimal function, reducing the need for additional TFTs and simplifying the overall device structure while maintaining precise light emission control.
Solution Approach 2:
The oxide semiconductor TFT serves multiple functions: it acts as both a switching element and a light emission control element. This multi-functionality reduces the total number of TFTs required in the display apparatus, thereby reducing device complexity while maintaining precise control over light emission.
2Measurement precision
If the number of TFTs is increased to accurately control light emission, then light emission control precision is improved, but power consumption increases
Solution Approach 1:
The patent applies different semiconductor material qualities to different functional locations: oxide semiconductors are used specifically in TFTs that require low leakage current for light emission control, while silicon-based semiconductors are used for switching functions. This localized optimization reduces overall power consumption by placing low-leakage components only where needed for precise light emission control.
3Use of energy by moving object
If oxide semiconductor TFTs are used to reduce power consumption, then power consumption is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent introduces an intermediary conductive layer between the oxide semiconductor TFT and the silicon-based TFT. This intermediary layer serves as a buffer that tolerates manufacturing variations in contact hole alignment, reducing the stringency of precision requirements while still enabling effective electrical connection and low power consumption operation.
Data Source
AI summary
A display apparatus includes a substrate including a display area for displaying an image, a first thin film transistor in the display area and including a first semiconductor layer having a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode and having a first contact hole extending therethrough, and a second thin film transistor on the first interlayer insulating layer and including a second semiconductor layer having an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer. A portion of the second semiconductor layer extends into a first contact hole and is electrically connected to the first semiconductor layer.