Hybrid Silicon-Oxide TFT Pixel Circuit for Low-Power Light Control
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Solution Overview
Problem
Existing display apparatuses face challenges in increasing integration and reducing power consumption due to the limited control over light emission in display devices, particularly with the increasing number of thin film transistors (TFTs) required for accurate light control.
Innovation Solution
The display apparatus incorporates a combination of silicon semiconductor and oxide semiconductor TFTs, with specific layer structures and contact hole configurations to enhance connectivity and reduce power consumption, including a substrate with multiple TFTs and a storage capacitor design that allows for efficient voltage management and reduced leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of TFTs is increased to accurately control light emission, then light emission control precision is improved, but device complexity and power consumption increase
Solution Approach 1:
The patent applies local quality by using different semiconductor materials (silicon-based for driving TFTs, oxide-based for switching TFTs) in different locations of the pixel circuit. This allows each TFT to be optimized for its specific function: silicon TFTs provide high mobility for precise voltage control in driving transistors, while oxide TFTs provide low leakage for stable charge storage in switching transistors, thereby achieving accurate light emission control without uniformly increasing all TFT parameters
Solution Approach 2:
The patent employs composite materials by combining silicon-based semiconductor and oxide-based semiconductor in the same pixel circuit. This composite approach leverages the complementary strengths of both materials: silicon provides high carrier mobility for precise control, while oxide provides low off-state current for reduced leakage, together achieving accurate light emission control with optimized device complexity
2Measurement precision
If the number of TFTs is increased to accurately control light emission, then light emission control precision is improved, but power consumption increases
Solution Approach 1:
The patent applies local quality by strategically placing oxide-based semiconductor TFTs in positions where low leakage is critical (switching TFTs connected to storage capacitors) while using silicon-based semiconductor TFTs where high mobility is needed (driving TFTs). This localized optimization reduces overall power consumption by minimizing leakage currents in charge-holding paths while maintaining precise control capability in voltage-regulation paths
Solution Approach 2:
The patent employs composite materials combining silicon-based and oxide-based semiconductors to reduce power consumption. The oxide-based TFTs contribute low off-state current characteristics that minimize leakage power loss, while silicon-based TFTs provide high on-state current for efficient voltage control, achieving accurate light emission control with reduced overall power consumption
3Loss of energy
If oxide semiconductor TFTs are used to reduce leakage current, then power consumption is reduced, but manufacturing precision may be affected
Solution Approach 1:
The patent applies segmentation by dividing the pixel circuit into different functional regions and assigning different semiconductor materials to different segments. Oxide-based semiconductor is used in switching TFTs where low leakage is paramount, while silicon-based semiconductor is used in driving TFTs where high mobility and precise voltage control are critical. This segmentation allows each material to be optimized for its specific manufacturing requirements and performance goals
Solution Approach 2:
The patent employs composite materials by integrating both oxide-based and silicon-based semiconductor layers in the same device structure. This composite approach balances the low leakage advantage of oxide semiconductors with the high mobility and manufacturing maturity of silicon semiconductors, achieving reduced power consumption while maintaining manufacturing precision through the complementary properties of both materials
4Productivity
If multi-layer TFT structure is implemented to improve connectivity, then integration density is improved, but device complexity increases
Solution Approach 1:
The patent applies merging by combining multiple functional layers into an integrated multi-layer structure. The first interlayer insulating layer integrates both planarization and insulation functions, while the second interlayer insulating layer combines insulation with contact hole formation for inter-TFT connectivity. This merging of functions into unified layers achieves high integration density while managing structural complexity through functional integration
Data Source
AI summary
A display apparatus includes a substrate including a display area for displaying an image, a first thin film transistor in the display area and including a first semiconductor layer having a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a first interlayer insulating layer covering the first gate electrode and having a first contact hole extending therethrough, and a second thin film transistor on the first interlayer insulating layer and including a second semiconductor layer having an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer. A portion of the second semiconductor layer extends into a first contact hole and is electrically connected to the first semiconductor layer.