Hybrid Wafer Bonding for High-Density Semiconductor Stacking
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Solution Overview
Problem
Current semiconductor stack technologies face challenges in increasing density and reducing costs while maintaining electrical performance and reliability, particularly in forming efficient bonding interfaces between wafers without the need for de-bonding layers and complex processing steps.
Innovation Solution
A method of manufacturing a semiconductor device involving the bonding of two identical device wafers with dielectric-to-dielectric and metal-to-metal interfaces using a hybrid-bonding process, eliminating the need for de-bonding layers and reducing wafer thickness to enhance density and reduce costs, while ensuring favorable electrical performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional stack technology is used with de-bonding layers and complex processing steps, then bonding interface reliability is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent removes the de-bonding layer from the bonding interface structure, eliminating the need for complex de-bonding processing steps while maintaining bonding reliability through direct dielectric-to-dielectric and metal-to-metal bonding between wafers
Solution Approach 2:
The patent combines dielectric-to-dielectric bonding and metal-to-metal bonding into a single hybrid bonding interface, integrating multiple bonding functions into one unified structure that simplifies the overall bonding process while enhancing interface reliability
2Productivity
If wafer thickness is reduced to increase density, then mounting density is improved, but structural strength and reliability deteriorate
Solution Approach 1:
The patent employs hybrid bonding combining dielectric and metal materials at the bonding interface, creating a composite structure that provides both mechanical strength and electrical functionality, allowing thin wafers to maintain sufficient structural integrity while achieving high mounting density
3Ease of manufacture
If de-bonding layers are eliminated to simplify processing, then manufacturing cost is reduced, but bonding interface reliability may worsen
Solution Approach 1:
The patent uses temporary bonding structures during manufacturing that are removed in final processing, allowing simplified manufacturing without compromising the reliability of the permanent bonding interface through direct dielectric-to-dielectric and metal-to-metal bonding
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the creation of high-density semiconductor devices with improved electrical performance and reliability by forming direct dielectric-to-dielectric and metal-to-metal bonds between wafers, reducing thickness and eliminating unnecessary processing steps, thereby lowering costs and increasing efficiency.
Implementation Method 1
bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer
Data Source
AI summary
The disclosure provides a method of manufacturing a semiconductor device including bonding a second device wafer to a first device wafer, such that a first bonding interface including a dielectric-to-dielectric bonding interface and a metal-to-metal bonding interface is formed between the first device wafer and the second device wafer, wherein the second device wafer is electrically coupled to the first device wafer, and a function of the first device wafer and the second device wafer are the same kind of device wafer. A semiconductor device is also provided.