Hybrid X-Ray Detection Substrate for MTF and Voltage Balance
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Solution Overview
Problem
Traditional X-ray detection technologies face challenges with low resolution and image quality due to the limitations of direct-conversion and indirect-conversion detectors, where direct-conversion detectors require high working voltages and energy consumption, while indirect-conversion detectors suffer from lower modulation transfer function (MTF) due to scattering in scintillator layers.
Innovation Solution
A detection substrate is designed with a base substrate, a direct-conversion photosensitive device, an indirect-conversion photosensitive device, and a reading transistor, where both types of photosensitive devices are electrically connected to the same reading transistor, allowing for balanced absorption and conversion of X-rays, reducing the thickness and bias voltage of the direct-conversion material layer, and incorporating a scintillator layer to enhance MTF.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If direct-conversion photosensitive device is used, then detection resolution is improved, but working voltage and energy consumption increase
Solution Approach 1:
The patent combines direct-conversion and indirect-conversion photosensitive devices into a single hybrid detector structure. The direct-conversion layer (e.g., amorphous selenium) provides high resolution for absorbed X-rays, while the indirect-conversion layer (e.g., scintillator material) converts remaining X-rays to visible light for detection. This merging allows the system to achieve high detection resolution through direct conversion while reducing overall energy consumption by utilizing indirect conversion for photons that pass through the direct-conversion layer, thereby resolving the contradiction between resolution and energy use.
2Use of energy by moving object
If indirect-conversion photosensitive device is used, then working voltage is reduced, but modulation transfer function decreases due to scattering
Solution Approach 1:
The patent segments the photoelectric conversion function into two distinct layers: a direct-conversion layer positioned closer to the X-ray source that maintains high MTF by directly converting X-rays to electrical signals with minimal scattering, and an indirect-conversion layer positioned deeper that operates at lower voltages to convert remaining X-rays. This segmentation allows each layer to optimize its performance characteristics, with the direct-conversion segment preserving MTF and the indirect-conversion segment reducing voltage requirements.
3Reliability
If direct-conversion material layer thickness is increased, then absorption efficiency is improved, but bias voltage requirement increases
Solution Approach 1:
The patent applies partial action by using a relatively thin direct-conversion material layer (e.g., 100-500 μm of amorphous selenium) that absorbs only a portion of the incident X-rays (approximately 30-70% depending on energy and thickness). This partial absorption approach allows the direct-conversion layer to operate at moderate bias voltages while the indirect-conversion layer handles the remaining X-rays, thereby achieving satisfactory overall absorption efficiency without requiring excessively high bias voltages that would be needed if a single thick direct-conversion layer were used.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves a better balance between MTF and working voltage, improving detection resolution and efficiency while reducing energy consumption and maintaining high sensitivity, thereby enhancing the performance of X-ray detectors.
Implementation Method 1
a direct-conversion photosensitive device on the base substrate
Implementation Method 2
an indirect-conversion photosensitive device, located between the base substrate and a layer where the direct-conversion photosensitive device is located
Data Source
AI summary
The embodiments of the present disclosure provide a detection substrate and a ray detector, comprising a base substrate; a direct-conversion photosensitive device located on the base substrate; an indirect-conversion photosensitive device located between the base substrate and the layer where the direct-conversion photosensitive device is located; and a reading transistor located between the base substrate and the layer where the indirect-conversion photosensitive device is located. The reading transistor is electrically connected to the direct-conversion photosensitive device and the indirect-conversion photosensitive device respectively.


