Hydrazine-Based ALD Seal Material for Microelectronic Devices
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Solution Overview
Problem
Conventional methods for forming seal materials in microelectronic devices, such as plasma-enhanced chemical vapor deposition (PECVD) and plasma-enhanced atomic layer deposition (PEALD), face challenges including slow deposition rates, damage to sensitive materials, and incomplete coverage, especially in high aspect ratio structures and 3D devices.
Innovation Solution
The use of an atomic layer deposition (ALD) process with a hydrazine-based compound as a precursor, which chemisorbs to the substrate and reacts with silicon-centered and nitrogen-centered radicals to form a silicon nitride-based seal material, reducing plasma exposure and allowing for lower processing temperatures, thereby alleviating damage and ensuring complete coverage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional PECVD or PEALD processes are used to form seal material, then the seal material can be deposited, but the deposition rate is slow and processing time is extended
Solution Approach 1:
The patent changes the deposition parameters by using a plasma-free ALD process instead of plasma-enhanced methods, enabling faster deposition rates while maintaining material quality. The process uses elevated temperatures (400-600°C) to accelerate the chemical vapor deposition without plasma activation, achieving both high productivity and complete coverage.
Solution Approach 2:
The patent replaces the plasma-based deposition mechanism with a thermal chemical vapor deposition mechanism. By substituting the plasma field with thermal energy, the process achieves faster deposition rates while avoiding plasma-induced damage to sensitive materials, thus improving productivity without extending processing time.
2Temperature
If plasma-enhanced processes are used to form seal material, then deposition can occur at lower temperatures, but material damage occurs due to high ion energy density
Solution Approach 1:
The patent extracts and removes the plasma component from the deposition process, retaining only the thermal chemical vapor deposition mechanism. This eliminates the harmful ion energy density while maintaining the ability to deposit seal material at controlled temperatures, preventing damage to sensitive chalcogenide and electrode materials.
Solution Approach 2:
The patent converts the potential harm of high ion energy by completely eliminating plasma exposure. Instead of trying to mitigate plasma damage, the process uses pure thermal energy which, when properly controlled, provides beneficial uniform heating without the harmful side effects of plasma-induced material degradation.
3Manufacturing precision
If conventional processes are used to form seal material, then deposition can occur, but incomplete or non-uniform coverage is achieved in high aspect ratio structures
Solution Approach 1:
The patent employs a periodic cyclic deposition process with multiple alternating steps including precursor exposure, purging, and deposition phases. This periodic action ensures complete and uniform coverage by allowing the precursor to penetrate deep into high aspect ratio structures during each cycle, achieving manufacturing precision in complex 3D geometries.
Solution Approach 2:
The patent maintains continuous deposition action through optimized cyclic processing that ensures uninterrupted material deposition on all surfaces including vertical walls and bottom surfaces of high aspect ratio structures. The continuous exposure and purging cycles guarantee complete coverage without requiring complex process interruptions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The ALD process enhances the deposition rate, minimizes material damage, and provides a uniform, hermetic seal that protects chalcogenide materials from oxidation and contamination, maintaining their physical condition and stoichiometry.
Implementation Method 1
a hydrazine-based compound as a precursor, which chemisorbs to the substrate and reacts with silicon-centered and nitrogen-centered radicals to form a silicon nitride-based seal material
Implementation Method 2
an atomic layer deposition (ALD) process with a hydrazine-based compound as a precursor, which chemisorbs to the substrate and reacts with silicon-centered and nitrogen-centered radicals to form a silicon nitride-based seal material
Data Source
AI summary
A method of forming a microelectronic device comprises treating a base structure with a first precursor to adsorb the first precursor to a surface of the base structure and form a first material. The first precursor comprises a hydrazine-based compound including Si—N—Si bonds. The first material is treated with a second precursor to covert the first material into a second material. The second precursor comprises a Si-centered radical. The second material is treaded with a third precursor to covert the second material into a third material comprising Si and N. The third precursor comprises an N-centered radical. An ALD system and a method of forming a seal material through ALD are also described.