Hydrochloric Acid Purification Through Extended Gas-Liquid Contact
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for producing high-purity hydrochloric acid fail to efficiently remove low-boiling-point impurities, particularly inert gases like nitrogen and oxygen, which are inhibiting factors for semiconductor manufacturing due to their presence even after aeration treatments.
Innovation Solution
A method involving gas-liquid contact between hydrogen chloride gas and crude hydrochloric acid with a concentration below saturation, continuing the contact until an excess of 0.1% of the mass of saturated hydrochloric acid is reached to enhance impurity removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If aeration treatment with inert gas is performed to remove low-boiling-point impurities, then removal efficiency of impurities is improved, but inert gas components are newly dissolved in the hydrochloric acid
Solution Approach 1:
The patent uses a liquid bridge (water layer) as an intermediary between the gas phase and hydrochloric acid liquid phase. This liquid bridge selectively absorbs impurity gases while allowing hydrogen chloride to pass through, preventing direct dissolution of inert gases into the hydrochloric acid while still achieving impurity removal
Solution Approach 2:
The system uses the hydrochloric acid solution itself to drive the removal process. By controlling the concentration and flow rate, the hydrochloric acid automatically creates the conditions for impurity removal through gas-liquid contact without requiring external inert gas introduction
2Manufacturing precision
If distillation is performed to remove impurities, then high-boiling-point components are removed, but low-boiling-point impurities are concentrated instead
Solution Approach 1:
Instead of using distillation which concentrates low-boiling-point impurities, the patent inverts the approach by using gas-liquid contact where the liquid phase absorbs gases. This reverse approach allows low-boiling-point impurities to be removed while preventing their concentration
3Quantity of substance
If gas-liquid contact is continued until saturation to maximize hydrogen chloride absorption, then hydrogen chloride concentration is improved, but low-boiling-point impurities remain in the solution
Solution Approach 1:
The patent applies partial action by controlling the gas-liquid contact to achieve just enough hydrogen chloride absorption without reaching complete saturation. By stopping before saturation and using controlled excess hydrogen chloride gas, the system removes impurities while maintaining optimal hydrogen chloride concentration without co-absorbing low-boiling-point impurities
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces low-boiling-point impurities, including nitrogen and oxygen, to extremely low levels, enabling the production of high-purity hydrochloric acid suitable for semiconductor applications.
Implementation Method 1
bringing hydrogen chloride gas into gas-liquid contact with crude hydrochloric acid that has a hydrogen chloride concentration of less than the saturation value
Implementation Method 2
the crude hydrochloric acid also contains significant amounts of low-boiling-point impurities such as hydrogen, methane, ethylene, and acetylene... which are released and removed
Data Source
AI summary
The present invention provides a method including bringing hydrogen chloride gas into gas-liquid contact with crude hydrochloric acid that has a hydrogen chloride concentration of less than the saturation value and that contains low-boiling-point impurities, suitably at least one selected from hydrogen, nitrogen, oxygen, methane, ethylene, and acetylene, wherein the gas-liquid contact of the hydrogen chloride gas is further continued after the hydrogen chloride concentration reaches the saturation value until an excess amount of 0.1% or more of the mass of the saturated hydrochloric acid has been subjected to the contact treatment.
