Hydrofluoroethylene Deposition Gas for Low-GWP Bosch Etching
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Solution Overview
Problem
Existing semiconductor production processes, particularly the Bosch process, rely on high global warming potential (GWP) gases like c-C4F8, CF4, SF6, and CHF3, leading to environmental impact and decreased productivity due to frequent gas switching and process-dependent surface patterns.
Innovation Solution
A deposition gas containing hydrofluoroethylene, preferably difluoroethylene, is used for both Bosch and non-Bosch processes, offering a low-GWP alternative with high deposition rates and improved film resistance, suitable for through-silicon via (TSV) production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If high GWP gases like c-C4F8, CF4, SF6, and CHF3 are used in the Bosch process, then deposition performance is maintained, but environmental impact increases
Solution Approach 1:
The patent changes the chemical composition parameter of the deposition gas from traditional high-GWP gases (c-C4F8, CF4, SF6, CHF3) to hydrofluoroethylene (HFO-1225ye with GWP=1). This parameter substitution maintains the deposition function while dramatically reducing environmental harm. The hydrofluoroethylene gas provides sufficient reactivity to achieve high deposition rates without the harmful environmental effects of conventional gases.
Solution Approach 2:
The patent adopts hydrofluoroethylene as a replacement gas that can be used without the need for frequent gas switching. This single-gas approach eliminates the complexity of managing multiple gas types and reduces environmental impact while maintaining productivity. The gas serves its deposition purpose effectively and can be disposed of or vented without the severe environmental consequences associated with high-GWP gases.
2Adaptability or versatility
If frequent gas switching is performed in the Bosch process, then process flexibility is maintained, but productivity decreases
Solution Approach 1:
The patent makes the hydrofluoroethylene gas serve multiple functions that previously required different gases. It can perform both the deposition function and maintain process flexibility without requiring switching to other gas types. This universal gas replaces multiple specialized gases, eliminating the productivity loss from frequent switching while preserving adaptability through controlled parameter adjustments.
Solution Approach 2:
By using hydrofluoroethylene as a single continuous gas supply, the patent eliminates the interruptions caused by frequent gas switching. The useful action of deposition continues uninterrupted, improving productivity while the gas can still be adjusted to meet different process requirements, maintaining flexibility without the need to switch gases.
3Manufacturing precision
If process-dependent surface patterns are formed, then deposition control is achieved, but film resistance decreases
Solution Approach 1:
The patent changes the gas composition parameter to hydrofluoroethylene, which inherently provides both good deposition control and superior film resistance. The chemical properties of hydrofluoroethylene enable precise control over deposition patterns while simultaneously forming films with enhanced resistance to etching and degradation, resolving the trade-off between control and strength.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hydrofluoroethylene deposition gas enhances productivity and reduces environmental impact by providing high deposition rates and etching resistance, while maintaining effective film formation on semiconductor substrates.
Implementation Method 1
deposition in plasma treatment
Implementation Method 2
deposition of plasma treatment is performed
Data Source
Figure 1
Figure 2(A)~2(B)
Figure 3
AI summary
An object of the present disclosure is to newly provide a deposition gas. Deposition gas.