Hydrogen-absorbing layer in oxide semiconductor array substrate
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Solution Overview
Problem
The oxide semiconductor layer in array substrates for display devices deteriorates due to hydrogen diffusion from insulating layers, leading to negative shifts in current and voltage properties and reduced display quality.
Innovation Solution
Incorporating hydrogen-absorbing layers made of nickel, palladium, or platinum particles between insulating layers and the oxide semiconductor layer to prevent hydrogen diffusion, thereby maintaining the semiconductor properties and preventing negative threshold voltage shifts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If insulating layers (gate insulating layer, etch stopper, passivation layer) are formed over or under the oxide semiconductor layer, then the structural integrity and fabrication process are improved, but hydrogen from these insulating layers diffuses into the oxide semiconductor layer causing deterioration
Solution Approach 1:
A hydrogen absorbing layer comprising nickel, palladium, or platinum particles is introduced as an intermediary between the insulating layers and the oxide semiconductor layer. This intermediary layer absorbs hydrogen from the insulating layers, preventing hydrogen diffusion into the oxide semiconductor layer while maintaining the structural integrity provided by the insulating layers.
Solution Approach 2:
The hydrogen that would normally cause harm by diffusing into the oxide semiconductor layer is instead absorbed by the hydrogen absorbing layer. The harmful hydrogen is converted into a beneficial effect where it is trapped and neutralized by the nickel, palladium, or platinum particles, preventing deterioration of the oxide semiconductor layer.
2Reliability
If multiple insulating layers are used in the array substrate, then the device functionality and protection are improved, but the lifetime of the oxide semiconductor layer is reduced due to hydrogen-induced deterioration
Solution Approach 1:
The hydrogen absorbing layer serves as a protective intermediary that allows the multiple insulating layers to perform their protective and functional roles while preventing the harmful side effect of hydrogen diffusion. This enables the device to maintain its functionality and protection benefits while extending the lifetime of the oxide semiconductor layer.
3Ease of manufacture
If insulating layers containing hydrogen are used, then the fabrication process is simplified and device protection is improved, but the oxide semiconductor layer deteriorates and loses its semiconductor properties
Solution Approach 1:
The hydrogen absorbing layer is introduced as a mediator that allows the use of hydrogen-containing insulating layers to be maintained for ease of manufacture and device protection, while simultaneously protecting the oxide semiconductor layer from hydrogen-induced deterioration and preserving its semiconductor properties.
Solution Approach 2:
The hydrogen that would normally cause deterioration and loss of semiconductor properties is instead absorbed by the hydrogen absorbing layer. This converts the harmful effect into a beneficial protection mechanism, allowing the use of hydrogen-containing insulating layers without compromising the semiconductor properties of the oxide semiconductor layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively restrains hydrogen diffusion, preserving the oxide semiconductor layer's properties and preventing display quality deterioration by maintaining uniform brightness and current-voltage characteristics.
Implementation Method 1
Incorporating hydrogen-absorbing layers made of nickel, palladium, or platinum particles between insulating layers and the oxide semiconductor layer to prevent hydrogen diffusion
Data Source
AI summary
An array substrate includes: a substrate; a thin film transistor including a gate electrode, an oxide semiconductor layer and source and drain electrodes, wherein a first insulating layer of an inorganic insulating material is disposed between the gate electrode and the oxide semiconductor layer, and wherein a second insulating layer of an inorganic insulating material is disposed between the oxide semiconductor layer and the source and drain electrodes; a passivation layer on the thin film transistor; a first electrode on the passivation layer in the pixel region; and a first hydrogen absorbing layer on at least one of top and bottom surfaces of the first insulating layer, top and bottom surfaces of the second insulating layer and top and bottom surfaces of the passivation layer, the first hydrogen absorbing layer including plurality of particles spaced apart from each other and including one of nickel, palladium and platinum.