Hydrogen Annealing for Semiconductor Through-Via Capacitance Stability
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor device manufacturing methods face challenges in achieving high reliability due to variations in capacitive components caused by dangling bonds and moisture in the spacer layer, leading to instability in the through-via's capacitance characteristics.
Innovation Solution
A method involving annealing processes in a hydrogen atmosphere is employed to terminate dangling bonds on the semiconductor substrate's side wall and remove moisture from the spacer layer, ensuring the interface between the substrate and spacer layer is inactivated, thereby stabilizing the through-via's capacitive components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing methods are used without annealing processes, then the manufacturing process is simpler and faster, but the capacitive components vary due to dangling bonds and moisture in the spacer layer
Solution Approach 1:
The patent applies preliminary action by performing annealing processes in a hydrogen atmosphere before subsequent manufacturing steps. The first annealing process terminates dangling bonds on the semiconductor substrate side wall, and the second annealing process removes moisture from the spacer layer, preparing the structure in advance to ensure stable capacitive components throughout the manufacturing process.
Solution Approach 2:
The patent utilizes parameter changes by controlling the annealing processes in a hydrogen atmosphere at specific temperatures. The hydrogen atmosphere and temperature parameters are optimized to terminate dangling bonds and remove moisture, thereby changing the physical and chemical state of the spacer layer and substrate interface to achieve stable capacitive characteristics.
2Reliability
If annealing processes in hydrogen atmosphere are implemented, then capacitive component stability is improved, but manufacturing time and process complexity increase
Solution Approach 1:
The annealing processes are integrated into the manufacturing flow as preliminary steps that prepare the substrate and spacer layer interface before subsequent processing. By performing these treatments early, the patent prevents later variations in capacitive components, avoiding the need for additional corrective steps that would extend the manufacturing cycle.
Solution Approach 2:
The patent merges the functions of dangling bond termination and moisture removal into a unified annealing process sequence. Both the first annealing process for the substrate side wall and the second annealing process for the spacer layer are combined in the manufacturing flow, achieving multiple objectives simultaneously rather than requiring separate, time-consuming steps.
3Ease of manufacture
If dangling bonds and moisture are not addressed, then the manufacturing process is simpler, but fixed charge effects and moisture-related issues reduce device reliability
Solution Approach 1:
The patent converts the harmful effects of dangling bonds and moisture into beneficial outcomes by using hydrogen annealing. The hydrogen atmosphere transforms dangling bonds into stable hydrogen-terminated bonds and removes moisture through thermal treatment, thereby converting potential reliability issues into opportunities for creating a stable, low-defect interface that enhances device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses variations in capacitive components, enhancing the reliability and stability of the semiconductor device's operation by reducing fixed charge effects and moisture-related issues.
Implementation Method 1
carrying out a first annealing process in a first gas atmosphere that contains hydrogen after formation of the first opening
Implementation Method 2
annealing process in a hydrogen atmosphere is employed to terminate dangling bonds on the semiconductor substrate's side wall
Implementation Method 3
carrying out a second annealing process after formation of the second insulating layer
Implementation Method 4
remove moisture from the spacer layer
Data Source
AI summary
According to an embodiment, a method of manufacturing a semiconductor device includes forming a first opening that extends from a second surface of a semiconductor substrate opposite to a first surface toward the first surface and extending to a first insulating layer in the semiconductor substrate, performing a first annealing process in a first gas atmosphere that contains hydrogen after formation of the first opening, forming a second insulating layer on a side wall of the semiconductor substrate in the first opening, performing a second annealing process after formation of the second insulating layer, forming a second opening that extends to the conductive layer in the first insulating layer through the first opening, and forming a via that is connected to the conductive layer in the first and second openings.