Hydrogen Barrier Insulating Layer for AMOLED Transistor Stability

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Solution Overview

Problem

In the production process of AMOLED display panels, hydrogen generated during the formation of the interlayer dielectric layer can diffuse to the active layer of transistors away from the substrate, affecting their electrical properties and potentially changing a semiconductor into a conductor, leading to transistor degradation.

Innovation Solution

An array substrate is designed with an insulating layer capable of blocking hydrogen, positioned between the interlayer dielectric layer of the first transistor and the active layer of the second transistor, using materials like aluminum oxide, cerium-doped aluminum oxide, or lanthanum-doped silicon oxide to prevent hydrogen diffusion, and additional layers such as silicon nitride and silicon oxide to further prevent contamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If thermal treatment processes are performed to form an active layer at temperature between 300°C and 500°C, then the active layer can be successfully formed, but hydrogen diffuses to the active layer causing transistor degradation

Engineering Contradiction:
Improvetransistor electrical propertiesVSAvoidhydrogen diffusion
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

An insulating layer is introduced as an intermediary barrier between the interlayer dielectric layer and the active layer. This insulating layer specifically blocks hydrogen diffusion while allowing the thermal treatment process to proceed, thus protecting the active layer from hydrogen contamination without interfering with the formation process

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The structure is segmented by introducing a dedicated insulating layer between the interlayer dielectric layer and the active layer. This segmentation creates a distinct hydrogen barrier zone that separates the hydrogen source from the vulnerable active layer, enabling independent optimization of each layer's function

Inventive Principle:
Principle #1Segmentation

2Reliability

If an insulating layer is added to block hydrogen diffusion, then transistor degradation is prevented, but device structure becomes more complex

Engineering Contradiction:
Improvetransistor electrical propertiesVSAvoidlayer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The insulating layer is designed to serve multiple functions simultaneously: it acts as a hydrogen barrier, provides electrical insulation, and maintains structural integrity during thermal processing. This multi-functionality reduces the need for additional specialized layers, thereby limiting the increase in device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The insulating layer effectively blocks hydrogen diffusion, maintaining the electrical properties of the transistors and preventing degradation, ensuring stable performance of the AMOLED display panel.

Implementation Method 1

an insulating layer is disposed between the interlayer dielectric layer of the first transistor and the active layer of the second transistor, and the insulating layer has an ability to block hydrogen

Methodology Applied
Scientific EffectHydrogen diffusion blocking: Diffusion Barrier

Data Source

PatentUS11302722B2Array substrate, manufacturing method thereof and display device
Publication Date: 2022.04.12 BOE TECHNOLOGY GROUP CO LTD
  • US11302722B2 patent drawing

AI summary

An array substrate, manufacturing method thereof, and a display device according to some arrangements of the present disclosure include: a first transistor and a second transistor; an active layer of the second transistor is disposed on a side of the interlayer dielectric layer of the first transistor away from the substrate; an insulating layer is disposed between the interlayer dielectric layer of the first transistor and the active layer of the second transistor, and the insulating layer has an ability to block hydrogen.