Hydrogen Block Layer for Oxide-Silicon TFT Integration
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Solution Overview
Problem
The integration of silicon-based and oxide semiconductor thin film transistors on the same substrate poses a challenge due to conflicting characteristics, where silicon-based semiconductors require hydrogen termination while oxide semiconductors are sensitive to hydrogen, leading to reliability issues and mobility concerns.
Innovation Solution
A structure is implemented with a hydrogen block layer, such as fluorine-added silicon nitride film, between the oxide semiconductor and silicon-based semiconductor films, and an oxygen block layer between the oxide semiconductor and the hydrogen block layer, along with forming the oxide semiconductor film above the silicon-based semiconductor film, to control the mobility of hydrogen and oxygen, thereby enhancing reliability and gate breakdown voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If thin film transistors of both silicon-based and oxide semiconductor are formed on the same substrate, then device functionality is enhanced, but processing complexity increases due to conflicting material requirements
Solution Approach 1:
The multi-layer gate insulating film structure serves multiple functions simultaneously: it provides gate insulation for both oxide semiconductor and silicon-based semiconductor transistors, acts as a hydrogen barrier to protect the oxide semiconductor, enables selective hydrogen termination of the silicon-based semiconductor, and maintains structural continuity across the substrate. This universal structure resolves the processing complexity by accommodating both device types within a single integrated framework rather than requiring separate processing lines.
Solution Approach 2:
The gate insulating film employs a composite structure with different material layers optimized for different functions. The first gate insulating film layer is optimized for interface quality with oxide semiconductor, the intermediate layer is optimized for hydrogen barrier properties, and the second gate insulating film layer is optimized for interface quality with silicon-based semiconductor. This composite approach allows the system to meet the conflicting material requirements of both semiconductor types while maintaining a unified device architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses hydrogen and oxygen mobility, improving the reliability of both types of thin film transistors, reduces processing steps, and enhances the gate breakdown voltage by forming the silicon-based semiconductor film above the oxide semiconductor film.
Implementation Method 1
a hydrogen block layer, such as fluorine-added silicon nitride film, between the oxide semiconductor and silicon-based semiconductor films
Implementation Method 2
an oxygen block layer between the oxide semiconductor and the hydrogen block layer
Data Source
AI summary
A display device has a thin film transistor on a substrate. The thin film transistor includes a first transistor having an oxide semiconductor film, a first gate insulating film, and a first gate electrode and a second transistor having a silicon semiconductor film, a second gate insulating film, and a second gate electrode. The first gate insulating film includes a first insulating film and a second insulating film. The oxide semiconductor film is positioned between the first insulating film and the substrate. The first insulating film is positioned between the silicon semiconductor film and the substrate and between the second insulating film and the substrate. The second gate insulating film includes an insulating film made of the same material in the same layer as the second insulating film. The first gate electrode and the second gate electrode are in the same layer.