Hydrogen-Diffused Semiconductor Assembly for Channel Conductivity Control
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Solution Overview
Problem
Existing semiconductor materials in integrated assemblies do not effectively differentiate conductivity between channel and source/drain regions, limiting the performance of transistors and memory cells.
Innovation Solution
Incorporating hydrogen diffusion into semiconductor materials, where the second and third semiconductor materials exhibit significantly increased conductivity, while the first semiconductor material's conductivity remains relatively unchanged, creating a structure with source/drain regions and a channel region with distinct conductivity levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen is diffused into semiconductor materials to increase conductivity, then the conductivity of source/drain regions is enhanced, but the channel region conductivity may also increase unintentionally
Solution Approach 1:
The patent applies local quality by creating distinct conductivity characteristics in different regions through selective hydrogen diffusion. Source/drain regions are engineered to have high hydrogen concentration for high conductivity, while the channel region maintains low hydrogen concentration for low conductivity. This is achieved through spatially selective processing steps that deposit hydrogen-containing materials only in source/drain regions, thereby locally differentiating the electrical properties of each region to resolve the contradiction between enhancing source/drain conductivity and maintaining channel conductivity control.
Solution Approach 2:
The patent introduces hydrogen as an intermediary substance that mediates the conductivity difference between source/drain regions and channel region. By controlling hydrogen distribution through intermediate layers and selective deposition processes, hydrogen acts as a mediator that enhances conductivity where needed (source/drain) while being excluded from regions where low conductivity is desired (channel). This intermediary approach allows precise control over conductivity differentiation without directly modifying the base semiconductor material properties.
2Ease of manufacture
If the same semiconductor material is used for channel and source/drain regions, then manufacturing is simplified, but conductivity differentiation between regions is insufficient
Solution Approach 1:
The patent applies parameter changes by modifying the hydrogen concentration parameter in the same semiconductor material to achieve different conductivity levels. Instead of using different base materials, the invention varies the hydrogen content parameter - high hydrogen concentration in source/drain regions for high conductivity, and low hydrogen concentration in the channel region for low conductivity. This parameter-based differentiation maintains manufacturing simplicity while achieving the required conductivity contrast through controlled hydrogen incorporation during processing.
Solution Approach 2:
The patent applies preliminary action by pre-depositing hydrogen-containing semiconductor materials in source/drain regions before final channel formation. These preliminary deposited layers serve as hydrogen reservoirs that ensure high hydrogen concentration in source/drain regions during subsequent processing, thereby establishing the conductivity differentiation early in the manufacturing process. This preliminary action simplifies later steps while ensuring adequate conductivity contrast is achieved.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the conductivity of source/drain regions by at least a factor of 10 compared to the channel region, improving the ON and OFF states of transistors and memory cells, thereby increasing the efficiency of memory arrays and integrated circuits.
Implementation Method 1
hydrogen being diffused within the first semiconductor material and the second semiconductor material
Data Source
AI summary
Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.