Integrated assemblies comprising hydrogen diffused within two or more different semiconductor materials, and methods of forming integrated assemblies
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Solution Overview
Problem
Existing semiconductor materials in integrated assemblies do not effectively differentiate conductivity between channel and source/drain regions, limiting the performance of transistors and memory cells.
Innovation Solution
The use of hydrogen diffusion to increase the conductivity of specific semiconductor materials in source/drain regions while maintaining low conductivity in channel regions, achieved by forming a stack of semiconductor materials with different compositions and applying hydrogen annealing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If uniform semiconductor material is used in channel and source/drain regions, then manufacturing is simpler, but conductivity differentiation between regions is insufficient
Solution Approach 1:
The patent applies local quality by using different semiconductor materials with different compositions in different regions: a first semiconductor material in the channel region and a second semiconductor material with different composition in the source/drain regions. This enables each region to have optimized electrical properties - the channel region maintains appropriate resistance for transistor control while source/drain regions achieve high conductivity for efficient current flow, thereby resolving the contradiction between manufacturing simplicity and conductivity differentiation.
2Reliability
If different semiconductor materials are used in channel and source/drain regions, then conductivity differentiation is improved, but device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the semiconductor structure into distinct regions with different materials: a channel region with a first semiconductor material and source/drain regions with a second semiconductor material. This segmentation enables independent optimization of electrical properties in each region while maintaining a relatively simple overall device structure, thus achieving good conductivity differentiation without excessive complexity.
3Reliability
If hydrogen diffusion is applied to all semiconductor regions, then conductivity increases uniformly, but channel region conductivity cannot be maintained low
Solution Approach 1:
The patent applies local quality by using different semiconductor materials with different compositions in different regions: a first semiconductor material in the channel region and a second semiconductor material with different composition in the source/drain regions. This enables each region to have optimized electrical properties - the channel region maintains appropriate resistance for transistor control while source/drain regions achieve high conductivity for efficient current flow, thereby resolving the contradiction between manufacturing simplicity and conductivity differentiation.
Solution Approach 2:
The patent uses hydrogen diffusion as an intermediary process to selectively enhance conductivity in source/drain regions. By controlling the hydrogen diffusion process and leveraging the different material compositions, hydrogen acts as a mediator that preferentially increases conductivity in the source/drain regions while having minimal effect on the channel region, thus achieving selective conductivity control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances the conductivity of source/drain regions by at least a factor of 10 compared to the channel region, improving the performance and functionality of transistors and memory cells.
Implementation Method 1
Hydrogen is diffused within the first, second and third semiconductor materials. The second and third semiconductor materials have substantially increased conductivity as compared to the first semiconductor material in response to the hydrogen diffused therein.
Data Source
AI summary
Some embodiments include an integrated assembly having a first semiconductor material between two regions of a second semiconductor material. The second semiconductor material is a different composition than the first semiconductor material. Hydrogen is diffused within the first and second semiconductor materials. The conductivity of the second semiconductor material increases in response to the hydrogen diffused therein to thereby create a structure having the second semiconductor material as source/drain regions, and having the first semiconductor material as a channel region between the source/drain regions. A transistor gate is adjacent the channel region and is configured to induce an electric field within the channel region. Some embodiments include methods of forming integrated assemblies.