Hydrogen Diffusion Barrier Layer for TFT Channel Protection
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Solution Overview
Problem
The PECVD process used in fabricating photodiodes for two-dimensional sensing devices, such as X-ray detection and fingerprint identification panels, damages the channel of thin film transistors due to hydrogen ions diffusing into the oxide active layer, degrading the carrier mobility and operational performance.
Innovation Solution
A hydrogen diffusion barrier layer is formed on the substrate before fabricating the photodiode, which prevents hydrogen ions generated during the PECVD process from reaching the thin film transistor channel, ensuring the integrity of the oxide active layer and maintaining the transistor's performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If PECVD process is used to fabricate photodiodes, then photodiode fabrication is achieved, but hydrogen ions diffuse into the oxide active layer causing damage to the thin film transistor channel
Solution Approach 1:
A hydrogen diffusion barrier layer is introduced as an intermediary between the PECVD process and the oxide active layer. This barrier layer selectively blocks hydrogen ions generated during PECVD from diffusing into the oxide active layer, while allowing the PECVD process to proceed normally for photodiode fabrication. The barrier layer thus mediates between the manufacturing process and the sensitive transistor channel.
Solution Approach 2:
The harmful hydrogen ions are extracted or removed from reaching the oxide active layer by the barrier layer. The barrier layer captures and prevents the diffusion of hydrogen ions that would otherwise be generated during the PECVD process, effectively taking out the harmful element before it can damage the transistor channel.
2Ease of manufacture
If PECVD process is used, then photodiode structure is formed, but carrier mobility in the oxide active layer is degraded
Solution Approach 1:
The hydrogen diffusion barrier layer serves as a protective intermediary that allows the PECVD process to form the photodiode structure while preventing hydrogen ion diffusion that would degrade carrier mobility. This mediator enables the manufacturing process to proceed without compromising the electrical properties of the oxide active layer.
Solution Approach 2:
The barrier layer is formed in advance before the PECVD process. This preliminary action ensures that when hydrogen ions are generated during PECVD, they are immediately blocked by the pre-existing barrier layer, preventing any degradation of carrier mobility in the oxide active layer.
3Device complexity
If no barrier layer is used, then manufacturing process is simpler, but oxide active layer is damaged by hydrogen diffusion
Solution Approach 1:
A hydrogen diffusion barrier layer is introduced as a protective intermediary between the PECVD process and the oxide active layer. This barrier layer selectively blocks hydrogen ions generated during PECVD from diffusing into the oxide active layer, while allowing the PECVD process to proceed normally for photodiode fabrication. The barrier layer thus mediates between the manufacturing process and the sensitive transistor channel.
Solution Approach 2:
The barrier layer is formed in advance before the PECVD process. This preliminary action ensures that when hydrogen ions are generated during PECVD, they are immediately blocked by the pre-existing barrier layer, preventing any degradation of carrier mobility in the oxide active layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively protects the thin film transistor channel from damage during the PECVD process, maintaining the characteristics and operation performance of the oxide active layer and the thin film transistor, while minimizing changes to the existing manufacturing process.
Implementation Method 1
forming a hydrogen diffusion barrier layer that covers the entire substrate, wherein the hydrogen diffusion barrier layer is electrically conductive and is electrically connected to the drain electrode
Implementation Method 2
In the PECVD process, a strong electric or magnetic field is used to ionize the original molecules of the required gas so as to create plasma which contains plenty of highly reactive chemical groups, and after these chemical groups undergo a series of chemical and plasma reactions, a solid thin film is formed on a sample surface
Implementation Method 3
a strong electric or magnetic field is used to ionize the original molecules of the required gas so as to create plasma which contains plenty of highly reactive chemical groups
Implementation Method 4
subjecting the intrinsic amorphous silicon thin film to ion implantation, and subjecting the ion-implanted intrinsic amorphous silicon thin film to activation treatment to form a P-type amorphous silicon thin film
Data Source
AI summary
The present disclosure provides a display panel, its manufacturing method and a display device. The manufacturing method of the display panel comprises: forming, on a substrate, a thin film transistor comprising a gate electrode, an active layer, a source electrode and a drain electrode; forming a hydrogen diffusion barrier layer that covers the entire substrate, wherein the hydrogen diffusion barrier layer is electrically conductive and is electrically connected to the drain electrode; and forming a photosensitive structure layer on the hydrogen diffusion barrier layer.