Hydrogen Diffusion in Display Semiconductor Members

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Solution Overview

Problem

Conventional display devices have lower electrical performance due to insufficient hydrogen gas content in semiconductor members, which affects the overall display quality.

Innovation Solution

A display device manufacturing method and apparatus that involves forming a semiconductor member with an insulating layer, introducing hydrogen gas into a sealing chamber, and heating it to a predetermined temperature (300° C. to 450° C.) to enhance hydrogen atom diffusion into the semiconductor member, with optional vacuuming and pressurization to increase hydrogen atom spread.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional manufacturing methods are used, then the manufacturing process is simple, but the electrical performance of semiconductor members is low due to insufficient hydrogen gas content

Engineering Contradiction:
Improveelectrical performance of semiconductor membersVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by introducing hydrogen gas into the sealing chamber before the semiconductor member is fully processed, allowing hydrogen atoms to diffuse into the insulating layer and semiconductor member in advance. This pre-treatment ensures sufficient hydrogen content is established before final device completion, improving electrical performance without requiring complex post-processing steps

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes physical parameters by controlling temperature (heating to predetermined temperature) and pressure (pressurizing hydrogen gas) in the sealing chamber. These parameter changes facilitate hydrogen atom diffusion into the semiconductor member while maintaining a relatively simple manufacturing process framework, resolving the contradiction between performance improvement and process complexity

Inventive Principle:
Principle #35Parameter changes

2Reliability

If hydrogen gas content in semiconductor members is increased, then electrical performance is enhanced, but the manufacturing process requires additional steps

Engineering Contradiction:
Improveelectrical performance of semiconductor membersVSAvoidease of manufacturing process
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent merges the hydrogen gas introduction step with the existing sealing chamber process. By combining hydrogen gas injection, heating, and pressurization into a single integrated treatment step within the sealing chamber, the patent enhances electrical performance without adding significant manufacturing complexity, making the process easier to implement

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent applies self-service by allowing hydrogen atoms to naturally diffuse into the insulating layer and semiconductor member through controlled temperature and pressure conditions. The system uses its own thermal and pressure fields to drive the hydrogen diffusion process without requiring additional complex equipment or manual intervention, maintaining ease of manufacture

Inventive Principle:
Principle #25Self-service

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method significantly increases the hydrogen atom content in semiconductor members, thereby enhancing their electrical performance and improving the display quality of the devices.

Implementation Method 1

heating the hydrogen gas and/or the display device in the sealing chamber to a predetermined temperature such that the hydrogen atoms in the insulating layer spread in the semiconductor member

Methodology Applied
Scientific EffectHeating: Heating

Implementation Method 2

hydrogen atoms in the hydrogen gas spread in the insulating layer... hydrogen atoms in the insulating layer spread in the semiconductor member

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 3

pressurizing the hydrogen gas in the sealing chamber such that the hydrogen atoms in the insulating layer spreads into the semiconductor member

Methodology Applied
Scientific EffectPressurization: Pressurisation

Data Source

PatentUS10886131B2Display device manufacturing method and display device manufacturing apparatus
Publication Date: 2021.01.05 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO LTD
  • US10886131B2 patent drawing
  • US10886131B2 patent drawing
  • US10886131B2 patent drawing

AI summary

A display device manufacturing method and a display device manufacturing apparatus are provided. The method includes steps A to D. The step A includes forming a display device. The step B includes disposing the display device in a sealing chamber. The step C includes adding hydrogen gas into the sealing chamber such that hydrogen atoms in the hydrogen gas spread in an insulating layer. The step D includes heating the hydrogen gas and/or the display device in sealing chamber such that the hydrogen atoms in insulating layer spread in the semiconductor member. The present invention can enhance electrical performance of the semiconductor member.