Hydrogen-Donor Semiconductor Substrate for Uniform Drift-Layer Resistivity
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving uniform specific resistance in n-type drift layers due to fluctuations in phosphorus concentration during crystal growth, leading to issues with withstand voltage and breakdown resistance, which are exacerbated by complex and costly manufacturing processes.
Innovation Solution
A semiconductor device is manufactured using a semiconductor substrate with a hydrogen-related donor, where a light ion or electron beam is used to introduce hydrogen plasma and annealing, forming hydrogen-related donors to uniformly distribute dopants across the n-type drift layer, thereby stabilizing specific resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If proton irradiation is performed multiple times with high energy (10 MeV or more) to uniformly convert the drift layer into a donor, then uniform specific resistance is achieved, but manufacturing cost increases due to extensive cyclotron device requirements
Solution Approach 1:
The patent changes the energy parameter of proton irradiation from high energy (10 MeV or more) to low energy (1 MeV or more and 10 MeV or less), which fundamentally alters the manufacturing approach. This parameter change enables the use of simpler, more cost-effective cyclotron devices while achieving uniform donor conversion in the drift layer through optimized low-energy irradiation protocols
2Ease of manufacture
If proton irradiation is performed with low energy (1 MeV or more and 10 MeV or less) to reduce manufacturing cost, then manufacturing cost decreases, but the half width of proton range distribution becomes small (10 μm or less), requiring a considerable number of irradiations
Solution Approach 1:
The patent merges multiple low-energy proton irradiation steps into a unified manufacturing process with optimized parameters. By combining irradiation with specific annealing treatments and optimizing the irradiation dose distribution, the process achieves uniform donor conversion without requiring an excessive number of separate irradiation steps, thus reducing total manufacturing time while maintaining cost effectiveness
3Manufacturing precision
If strict management of specific resistance tolerance is implemented to maintain ±10% tolerance, then specific resistance uniformity is maintained, but cost efficiency significantly reduces
Solution Approach 1:
The patent applies preliminary low-energy proton irradiation to convert the drift layer into a donor before device fabrication. This preliminary action establishes a uniform electrical characteristics foundation that inherently maintains specific resistance tolerance within ±10%, eliminating the need for costly post-processing management and inspections while ensuring product quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the process of achieving uniform specific resistance in n-type drift layers, reducing manufacturing costs and improving the stability of semiconductor devices by uniformly distributing hydrogen-related donors.
Implementation Method 1
a light ion or electron beam is used to introduce hydrogen plasma and annealing, forming hydrogen-related donors
Implementation Method 2
a light ion or electron beam is used to introduce hydrogen plasma and annealing, forming hydrogen-related donors
Implementation Method 3
a light ion or electron beam is used to introduce hydrogen plasma and annealing
Implementation Method 4
a light ion or electron beam is used to introduce hydrogen plasma and annealing
Data Source
AI summary
A semiconductor device is formed using a semiconductor substrate having a first main surface and a second main surface. A first semiconductor region of a first conductivity type is formed between the first main surface and the second main surface of the semiconductor substrate. A second semiconductor region is formed between the first semiconductor region and the first main surface. The first semiconductor region includes a hydrogen-related donor, and a concentration of the hydrogen-related donor of the first semiconductor region is equal to or larger than an impurity concentration of the first semiconductor region.