Micromechanical Device Hydrogen Drainage Layer

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Solution Overview

Problem

Hydrogen diffusion from IC chips into MEMS cavities leads to internal pressure variations, causing manufacturing defects and lack of long-term stability in micromechanical sensors.

Innovation Solution

Incorporating a hydrogen drainage layer between the IC functional layer and the cavity, optionally combined with a hydrogen barrier layer and a perforated metal sealing ring, to direct hydrogen outgassing to the atmosphere and reduce internal pressure fluctuations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a hydrogen barrier layer is applied to the IC chip to prevent hydrogen diffusion, then hydrogen protection of the cavity is improved, but the barrier layer must be structured to expose bond frame or chip-to-chip contacts creating permeable surfaces that reduce protection effectiveness

Engineering Contradiction:
Improvehydrogen protection effectivenessVSAvoidbarrier layer structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The protective function is segmented into two distinct layers: a hydrogen barrier layer (first protective layer) and a hydrogen drainage layer (second protective layer). The barrier layer provides primary protection while the drainage layer captures and redirects hydrogen that penetrates the barrier, eliminating the need for complex structuring of the barrier layer itself.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The hydrogen drainage layer acts as an intermediary between the IC chip and the cavity. It intercepts hydrogen diffusion paths, capturing hydrogen atoms before they can reach the cavity, and provides an alternative escape route to the outside environment.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If the IC chip uses standard manufacturing processes with metallic, semiconducting and dielectric layers, then device functionality is achieved, but hydrogen is trapped in the IC chip structure leading to diffusion into the cavity

Engineering Contradiction:
ImproveIC chip manufacturabilityVSAvoidhydrogen diffusion
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The hydrogen that would normally be harmful by diffusing into the cavity is instead redirected through the drainage layer to escape externally. The drainage layer converts the harmful diffusion path into a beneficial external venting path, maintaining standard IC manufacturing processes while eliminating the harmful effect.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

3Device complexity

If hydrogen is allowed to diffuse freely from the IC chip, then manufacturing simplicity is maintained, but internal pressure in the cavity varies leading to defective parts and lack of long-term stability

Engineering Contradiction:
Improveprotective layer structureVSAvoidinternal pressure stability
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The dual-layer protective structure is implemented during the manufacturing stage to preemptively address hydrogen diffusion issues. The barrier and drainage layers are integrated into the IC chip structure before final assembly, ensuring internal pressure stability is maintained throughout the device's operational life.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively prevents hydrogen entry into the cavity, enhancing internal pressure stability and ensuring the long-term functionality of micromechanical sensors by discharging hydrogen externally and reducing the load on hydrogen barriers.

Implementation Method 1

At high temperatures or over a sufficiently long period of time, the hydrogen diffuses out of the IC chip, preferably in the direction of the sensor element.

Methodology Applied
Scientific EffectDiffusion: Diffusion

Implementation Method 2

the IC chip comprises a hydrogen drainage layer which is disposed between the IC functional layer and the cavity

Methodology Applied
Scientific EffectPermeation: Permeation

Data Source

PatentUS20240124296A1Micromechanical device comprising a hydrogen drainage layer
Publication Date: 2024.04.18 ROBERT BOSCH GMBH
  • US20240124296A1 patent drawing
  • US20240124296A1 patent drawing
  • US20240124296A1 patent drawing

AI summary

A micromechanical device. The device includes a MEMS chip which comprises a cavity; an IC chip which includes an IC substrate and at least one IC functional layer, wherein the IC chip is connected to the MEMS chip such that the IC functional layer is disposed between the IC substrate and the cavity. The IC chip includes a hydrogen drainage layer which is disposed between the IC functional layer and the cavity.