Hydrogen Nitride Interlayer for Plasma-Damage-Limited Semiconductors
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Solution Overview
Problem
The plasma damage to the substrate surface during the manufacturing of semiconductor devices with stacked inorganic and organic interlayer insulating films is not effectively addressed, leading to potential deterioration of device characteristics, such as charge trapping in the channel region of transistors, due to the low heat resistance of the organic interlayer insulating film.
Innovation Solution
Incorporating a semiconductor nitride film containing hydrogen between the conductive patterns and the organic interlayer insulating film, which allows for terminating dangling bonds on the substrate surface without high-temperature heat treatment, thereby reducing plasma damage and suppressing conductor diffusion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If heat treatment is performed at high temperature to reduce plasma damage, then plasma damage is reduced, but the organic interlayer insulating film cannot withstand the high temperature
Solution Approach 1:
A semiconductor nitride film containing hydrogen is introduced as an intermediary layer between the conductive pattern and the organic interlayer insulating film. This hydrogen-containing film serves as a hydrogen source that can reduce plasma damage to the substrate surface without requiring high-temperature heat treatment, thereby resolving the contradiction between reducing plasma damage and protecting the heat-sensitive organic film.
Solution Approach 2:
The invention changes the approach from temperature-based plasma damage reduction to hydrogen concentration-based reduction. By controlling the hydrogen content in the semiconductor nitride film, the patent achieves plasma damage mitigation at lower temperatures that are compatible with the organic interlayer insulating film's thermal constraints.
2Device complexity
If the organic interlayer insulating film is used, then device structure is achieved, but plasma damage to substrate surface is not effectively reduced
Solution Approach 1:
The patent segments the protective function by introducing a dedicated semiconductor nitride film layer specifically for plasma damage reduction, separate from the organic interlayer insulating film's insulating function. This segmentation allows each layer to perform its specialized role without compromising the other.
Solution Approach 2:
The semiconductor nitride film acts as a mediator between the conductive pattern and the organic interlayer insulating film, providing hydrogen to reduce plasma damage while allowing the organic film to maintain its insulating function. This intermediary layer resolves the conflict between achieving the desired device structure and protecting against plasma damage.
3Ease of manufacture
If conventional structures are used, then manufacturing process is simple, but conductor diffusion occurs and threshold voltage varies
Solution Approach 1:
The semiconductor nitride film serves as a diffusion barrier intermediary between the conductive pattern and the organic interlayer insulating film. This layer prevents conductor atoms from diffusing into the organic film, thereby stabilizing the threshold voltage while adding minimal complexity to the manufacturing process.
Solution Approach 2:
The patent uses a composite structure combining the organic interlayer insulating film with a semiconductor nitride film containing hydrogen. This composite material approach provides both the insulating properties of the organic film and the plasma damage reduction and diffusion barrier properties of the nitride film, improving reliability without significantly complicating manufacturing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the characteristics of the semiconductor device by reducing plasma damage and preventing conductor diffusion, maintaining the threshold voltage of transistors within an allowable range and minimizing variations.
Implementation Method 1
a surface of the substrate irradiated with plasma may be damaged by the plasma. The plasma damage can be reduced by heat-treating the substrate at a relatively high temperature while supplying hydrogen.
Implementation Method 2
When dry etching is performed, a surface of the substrate irradiated with plasma may be damaged by the plasma.
Implementation Method 3
there is a possibility that the characteristics of the semiconductor device deteriorate, for example, charges are more likely to be trapped in a channel region of a transistor.
Data Source
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AI summary
There is provided a semiconductor device including a substrate, an inorganic interlayer insulating film, an organic interlayer insulating film, a first conductive pattern, and a semiconductor nitride film. The inorganic interlayer insulating film is stacked above the substrate. The organic interlayer insulating film is stacked above the inorganic interlayer insulating film. The first conductive pattern is disposed in the inorganic interlayer insulating film. The first conductive pattern has a first conductivity. The second conductive pattern is disposed in the organic interlayer insulating film. The second conductive pattern has a second conductivity. The second conductivity is higher than the first conductivity. The semiconductor nitride film is disposed between the first conductive pattern and the organic interlayer insulating film in a stacking direction. The semiconductor nitride film contains hydrogen.