Display Device With Hydrogen-Assisted Oxide Wiring
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Solution Overview
Problem
The conductivity variation in metal oxide thin film transistors affects the resolution of display devices, limiting the design freedom and causing luminance non-uniformity.
Innovation Solution
Incorporating an inorganic pattern with high hydrogen content below the oxide-based active layer to enhance conductivity during a heat treatment process, allowing the active layer to be used as wiring and increasing design freedom.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If metal oxide thin film transistor is used, then manufacturing process is simplified, but conductivity variation occurs affecting resolution
Solution Approach 1:
The patent introduces an inorganic pattern specifically at the conductor portion location where conductivity enhancement is most needed. This localized approach allows the metal oxide thin film transistor to benefit from improved conductivity in critical areas while maintaining the overall simplicity of the metal oxide manufacturing process. The inorganic pattern is strategically positioned to overlap with the gate electrode, providing targeted conductivity improvement without requiring changes to the entire transistor structure.
Solution Approach 2:
The patent combines metal oxide material with inorganic material in a composite structure. The metal oxide thin film transistor serves as the base structure, while the inorganic pattern acts as an additional functional layer that enhances conductivity. This composite approach allows the device to leverage the manufacturing simplicity of metal oxide while adding the conductivity enhancement capability of inorganic materials in a synergistic manner.
2Reliability
If inorganic pattern is added to enhance conductivity, then conductivity improves, but device structure becomes more complex
Solution Approach 1:
The patent merges the inorganic pattern with the existing metal oxide thin film transistor structure by positioning the inorganic pattern to overlap with the gate electrode region. This integration allows the inorganic material to enhance conductivity without requiring a completely separate structural system. The inorganic pattern is incorporated into the existing layer architecture, minimizing additional structural complexity while achieving the desired conductivity improvement.
Solution Approach 2:
By localizing the inorganic pattern to specific regions where conductivity enhancement is most critical (such as the conductor portion and gate electrode overlap areas), the patent avoids the need to modify the entire device structure. This localized approach reduces the overall structural complexity compared to a uniform modification of the entire transistor, while still achieving reliable conductivity improvement in the essential regions.
3Adaptability or versatility
If design freedom is increased by using active layer as wiring, then adaptability improves, but conductivity control becomes more difficult
Solution Approach 1:
The patent utilizes parameter changes by controlling the hydrogen content in the inorganic pattern to regulate conductivity. By adjusting the hydrogen concentration in the inorganic material, the conductivity of the active layer can be precisely controlled when used as wiring. This parameter-based control mechanism allows designers to achieve varying conductivity levels without compromising the structural simplicity or manufacturing ease of the metal oxide thin film transistor architecture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves conductivity and reduces luminance non-uniformity, enhancing the reliability and resolution of display devices.
Implementation Method 1
improving conductivity of an active layer, which overlaps an inorganic pattern, in a heat treatment process
Implementation Method 2
The second active layer includes a conductor portion disposed between a portion of the first gate layer and the inorganic pattern
Data Source
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AI summary
Provided is a display device. The display device comprises a first active layer disposed on a substrate and made of a first material, a second active layer disposed on the first active layer and made of a second material different from the first material, a first gate layer disposed on the second active layer, and an inorganic pattern disposed below the second active layer and overlapping a portion of the first gate layer. The second active layer includes a conductor portion disposed between a portion of the first gate layer and the inorganic pattern.