Hydrogen Peroxide Curing for Semiconductor Substrate Uniformity
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Solution Overview
Problem
Conventional oxidizing ambients, such as oxygen, ozone, and steam, are not sufficiently reactive at low temperatures and can cause non-uniform curing results in semiconductor processing, especially when used at atmospheric pressure.
Innovation Solution
Exposing a semiconductor substrate to a hydrogen peroxide ambient at low pressures (300 Torr or below) and short residence times (less than 5 minutes) to achieve uniform curing, with the option to follow a hydrogen peroxide cure with an anneal in an inert gas to improve film density and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional oxidizing ambients (oxygen, ozone, steam) are used at atmospheric pressure, then the curing process is simple and fast, but the curing uniformity deteriorates and reactivity is insufficient at low temperatures
Solution Approach 1:
The patent changes the pressure parameter from atmospheric pressure to reduced pressure (e.g., 100-300 Torr), and introduces hydrogen peroxide as a new chemical species. This parameter change enables highly uniform curing (non-uniformity ≤1% 1 sigma) while maintaining process simplicity, directly resolving the contradiction between curing uniformity and process complexity
Solution Approach 2:
The patent replaces conventional weak oxidants (oxygen, steam) with hydrogen peroxide, a strong oxidant that provides sufficient reactivity at low temperatures and reduced pressures. This enables effective curing without requiring high temperatures or complex process conditions, resolving the contradiction between curing uniformity and process complexity
2Temperature
If conventional oxidizing ambients are used at atmospheric pressure, then the process is simple, but the reactivity is insufficient at low temperatures
Solution Approach 1:
Hydrogen peroxide serves as a strong oxidant that maintains high reactivity at low temperatures where conventional oxidants fail. The patent demonstrates that H2O2 provides sufficient curing effectiveness at reduced temperatures and pressures, resolving the contradiction between low temperature operation and curing effectiveness
Solution Approach 2:
The patent changes the pressure parameter to reduced pressure (100-300 Torr) in combination with hydrogen peroxide, creating conditions that enhance the reactivity and uniformity of the curing process at low temperatures, thereby resolving the contradiction between temperature and curing effectiveness
3Manufacturing precision
If long residence time is used for H2O2 exposure, then complete curing is achieved, but thermal decomposition risk increases
Solution Approach 1:
The patent optimizes the residence time parameter to a specific range (0.1-5 minutes) that is sufficient for complete curing while avoiding the thermal decomposition that occurs with prolonged exposure. This parameter optimization resolves the contradiction between curing completeness and thermal decomposition risk
Solution Approach 2:
The patent uses reduced pressure conditions to enhance the efficiency of the curing process, allowing complete curing to be achieved in shorter times at lower temperatures, thereby reducing the risk of thermal decomposition while maintaining curing completeness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method provides highly uniform curing results with film properties having non-uniformity of 1% 1 sigma or less, improving manufacturing efficiency and safety by reducing thermal decomposition risks and enhancing film density and etch resistance.
Implementation Method 1
The exposure to the hydrogen peroxide ambient may be utilized to add oxygen to materials on the semiconductor substrates, for example, providing a reactive cure of flowable dielectric materials
Data Source
AI summary
In some embodiments, a reactive curing process may be performed by exposing a semiconductor substrate in a process chamber to an ambient containing hydrogen peroxide, with the pressure in the process chamber at about 300 Torr or less. In some embodiments, the residence time of hydrogen peroxide molecules in the process chamber is about five minutes or less. The curing process temperature may be set at about 500° C. or less. The curing process may be applied to cure flowable dielectric materials and may provide highly uniform curing results, such as across a batch of semiconductor substrates cured in a batch process chamber.