On-Demand Hydrogen Peroxide Generation for Semiconductor Thin Film Deposition
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Solution Overview
Problem
Existing methods for generating hydrogen peroxide for thin film deposition in semiconductor processing face issues such as decomposition during storage, wafer contamination from salt solutions, and surface damage from oxygen plasma, which affect the quality and consistency of oxide films.
Innovation Solution
A reaction system that includes an electrochemical cell with a porous electrolyte, gas diffusion layers, a catalyst layer, and membrane layers to generate hydrogen peroxide on demand, using hydrogen and oxygen gases to form a stable liquid solution, avoiding the need for salt solutions and minimizing decomposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hydrogen peroxide is stored for use in thin film deposition, then it provides a strong oxidizing capability, but it decomposes during storage leading to inconsistent doses
Solution Approach 1:
The system generates hydrogen peroxide on-demand through an electrochemical cell immediately before use in the deposition process, eliminating storage time and preventing decomposition. The electrochemical generation occurs in situ, ensuring consistent concentration and oxidizing capability throughout the process.
Solution Approach 2:
The system uses water from the process environment itself as the source material for generating hydrogen peroxide through electrochemical splitting. This self-service approach eliminates the need for external storage and handling of pre-prepared hydrogen peroxide solutions.
2Productivity
If salt solutions are used as electrolyte in electrochemical cell, then hydrogen peroxide can be generated, but particles are generated leading to wafer contamination
Solution Approach 1:
The system changes the electrolyte parameter from salt-based solutions to pure water, fundamentally altering the chemical composition to eliminate particle generation. This parameter change maintains electrochemical functionality while removing the contamination pathway.
Solution Approach 2:
The system creates a particle-free environment by using pure water as electrolyte and maintaining controlled conditions in the electrochemical cell, preventing contamination of the sensitive semiconductor wafers during the hydrogen peroxide generation process.
3Reliability
If oxygen plasma is used as oxygen source, then oxidation capability is enhanced, but surface damage occurs reducing ability to coat high aspect ratio features
Solution Approach 1:
The system changes the physical state parameter of the oxygen source from plasma (high energy, damaging) to liquid hydrogen peroxide (milder, controlled oxidation). This parameter change maintains oxidation capability while eliminating surface damage to high aspect ratio features.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system provides a consistent and stable supply of hydrogen peroxide, preventing decomposition and wafer contamination, thereby enhancing the quality and consistency of thin film deposition, particularly for oxide films on semiconductor substrates.
Implementation Method 1
the catalyst layer converts the hydrogen gas into a hydrogen ion (H+) gas
Implementation Method 2
the activated carbon layer converts the oxygen gas into an ion that reacts with the water in the porous electrolyte to form a liquid phase (HO2−) complex
Implementation Method 3
an electrochemical cell comprising: a porous electrolyte, a first gas diffusion layer, a second gas diffusion layer, a catalyst layer, an activated carbon layer, a first membrane layer, and a second membrane layer
Data Source
AI summary
A thin film deposition system is disclosed in order to form a thin film on a substrate. The thin film deposition system comprises a hydrogen peroxide source. The hydrogen peroxide source comprises an electrochemical cell that converts a hydrogen gas to a hydrogen ion gas. The electrochemical cell converts an oxygen gas and water into a liquid phase complex. The liquid phase complex reacts with the hydrogen ion gas to form hydrogen peroxide.