Hydrogen Peroxide PEALD for Faster Low-Temperature Silicon Films
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for depositing silicon-containing films at low temperatures and under weakly oxidizing conditions face challenges in maintaining high deposition rates and protecting temperature-sensitive substrates, such as mandrels in lithographic processes, while minimizing substrate damage.
Innovation Solution
A method involving alternating exposures of a silicon-containing compound with non-oxidizing or oxidizing plasma and hydrogen peroxide in a plasma-enhanced atomic layer deposition process to form silicon-containing films, allowing for deposition at temperatures below 100°C and enhancing film growth rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If PEALD is used to deposit silicon dioxide films at low temperatures (below 100°C), then substrate damage is reduced and temperature-sensitive mandrels are protected, but deposition rate decreases due to complex interactions between physical absorption, chemical absorption, surface hydroxylation and impurities
Solution Approach 1:
The invention changes the chemical parameters of the deposition process by introducing hydrogen peroxide as a reactive species in the plasma. This modifies the surface chemistry and reaction pathways, enabling higher deposition rates at low temperatures without compromising substrate integrity or mandrel protection.
Solution Approach 2:
The invention uses a composite approach by combining hydrogen peroxide with silicon-based compounds (such as BDEAS or DIPAS) in the plasma deposition process. This composite chemical system creates synergistic effects that enhance both deposition rate and film quality while maintaining low temperature processing conditions.
2Temperature
If deposition temperature is reduced to protect mandrels from degradation, then mandrel integrity is maintained, but etch resistance of deposited silicon dioxide decreases
Solution Approach 1:
The invention modifies the chemical composition and structure of the deposited film by incorporating hydrogen peroxide into the plasma process. This changes the film's chemical state and bonding characteristics, resulting in enhanced etch resistance even at low deposition temperatures that protect mandrel integrity.
3Manufacturing precision
If conventional PEALD processes are used with oxygen-based plasma, then conformal SiO2 films can be deposited at 50°C to 200°C, but substrate damage increases and mandrel protection is compromised
Solution Approach 1:
The invention changes the plasma chemistry from conventional oxygen-based plasma to hydrogen peroxide-based plasma. This parameter change maintains the ability to deposit conformal films while reducing substrate damage and improving mandrel protection during the deposition process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method achieves rapid deposition of high-quality silicon-containing films with improved etch resistance and reduced substrate damage, suitable for applications like lithographic patterning and encapsulation of organic materials.
Implementation Method 1
exposing the substrate to a non-oxidizing plasma and to hydrogen peroxide
Implementation Method 2
plasma-enhanced atomic layer deposition process to form silicon-containing films
Data Source
AI summary
Provided are methods for increasing the deposition rate and improving the film properties of silicon-containing films via plasma-enhanced atomic layer deposition (PEALD) by utilization of hydrogen peroxide. In particular, an exposure to hydrogen peroxide before, during, or after the plasma exposure step of a low temperature PEALD process utilizing silicon-containing compounds results in increased deposition rates and superior film characteristics as compared to PEALD processes using plasma alone. Additionally, the disclosed process may utilize non-oxidizing plasmas, increasing the range of substrates to which the process can be applied relative to those compatible with oxidizing plasmas.