Hydrogen Plasma Ion Source for Oven-Free Negative Helium Generation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing ion implanters using magnesium charge exchange sources for generating negative ions face issues with flammability and require lengthy heating times, leading to inefficiencies and safety concerns.
Innovation Solution
A hydrogen plasma-based ion source assembly that generates a heterogeneous negative ion beam by combining hydrogen and a second gas, such as helium, within a plasma chamber, allowing for the production of negative ions like helium without the need for a charge exchange oven.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a magnesium charge exchange source is used to generate negative ions, then negative hydrogen ions and negative helium ions can be generated, but the magnesium deposits become flammable and require lengthy heating times
Solution Approach 1:
The patent extracts and eliminates the magnesium charge exchange source from the system entirely. Instead of using magnesium to generate negative ions, the invention uses a hydrogen plasma source combined with a gas selection device that directly produces the desired negative ions without requiring magnesium heating, thereby removing the flammability hazard and eliminating lengthy heating times.
Solution Approach 2:
The patent replaces the expensive and hazardous magnesium source with a simpler, safer hydrogen plasma source. The hydrogen gas is consumed and replaced rather than heated and maintained, reducing both safety risks and operational complexity while maintaining the ability to generate negative hydrogen ions and negative helium ions.
2Adaptability or versatility
If a magnesium charge exchange source is used, then negative ions can be generated, but the system complexity and safety hazards increase
Solution Approach 1:
The patent removes the complex magnesium charge exchange oven and associated heating控制系统 from the system. The replacement system uses a hydrogen plasma source coupled with a gas selection device, which simplifies the overall system architecture while maintaining the capability to generate multiple types of negative ions including negative hydrogen ions and negative helium ions.
Solution Approach 2:
The hydrogen plasma source combined with the gas selection device serves multiple functions: it generates negative hydrogen ions directly, produces negative helium ions through electron attachment, and can be controlled to produce different ion types by adjusting gas flow ratios. This multi-functional approach replaces the specialized magnesium source while reducing system complexity.
3Productivity
If a magnesium charge exchange source is used, then negative ions are produced, but manufacturing costs and startup time increase
Solution Approach 1:
The patent replaces the expensive magnesium charge exchange source with a cost-effective hydrogen plasma source. Hydrogen gas is inexpensive and does not require complex heating infrastructure. The system achieves high ion beam currents by optimizing the hydrogen plasma generation and using a gas selection device to control the ion production efficiency, thereby reducing both manufacturing costs and startup time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Eliminates the need for a charge exchange oven, reducing safety hazards, manufacturing costs, and startup time, while enabling higher beam current and efficient electron transfer, thus enhancing ion implanter performance.
Implementation Method 1
a plasma chamber, coupled to receive a first flow of hydrogen gas from the hydrogen gas source, the ion source comprising a set of components to generate a plasma within the plasma chamber. The plasma may include a first portion of negative hydrogen ions.
Implementation Method 2
the set of components of the ions source may be further arranged to generate a second portion of second negative ions, different than the first portion of negative hydrogen ions, by reacting the second gas with the first portion of negative hydrogen ions.
Data Source
AI summary
An ion source assembly. The ion source assembly may include a hydrogen gas source, and an ion source, comprising a plasma chamber, coupled to receive a first flow of hydrogen gas from the hydrogen gas source, the ion source comprising a set of components to generate a plasma within the plasma chamber. The plasma may include a first portion of negative hydrogen ions. The ion source assembly may include a second gas source, separate from the hydrogen gas source, the second gas source being coupled to deliver to the plasma chamber a second flow of a second gas, different from the hydrogen gas. As such, the set of components of the ions source may be further arranged to generate a second portion of second negative ions, different than the first portion of negative hydrogen ions, by reacting the second gas with the first portion of negative hydrogen ions.