Hydrogen-Rich Layer Structure for Reliable 3D Semiconductor Gates
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining hydrogen supply efficiency due to the increasing number of layers, which affects the operation reliability of the devices.
Innovation Solution
Incorporating a hydrogen rich layer with a higher concentration of hydrogen or deuterium between the common source layer and the uppermost gate electrode, ensuring adequate hydrogen supply during high-temperature processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the number of layers in the semiconductor device is increased to enhance data storage capacity, then the data storage capacity is improved, but the hydrogen supply efficiency deteriorates due to the increased distance and complexity of hydrogen transport paths
Solution Approach 1:
The patent applies local quality by creating a hydrogen rich layer with specifically higher hydrogen concentration at the gate electrode region. This localized enhancement ensures adequate hydrogen supply to the gate electrode without requiring uniform hydrogen distribution throughout the entire multi-layer structure, thus maintaining hydrogen supply efficiency despite increased layer count.
Solution Approach 2:
The hydrogen rich layer is formed in advance before subsequent high-temperature processing steps. This preliminary action pre-supplies hydrogen to the gate electrode region, ensuring that hydrogen is available before any hydrogen loss occurs during subsequent fabrication processes, thereby maintaining reliability in multi-layer devices.
2Ease of manufacture
If high-temperature processes are applied during device fabrication, then the manufacturing process is completed, but hydrogen loss from the gate electrode occurs, affecting device reliability
Solution Approach 1:
The hydrogen rich layer serves as a hydrogen reservoir that compensates for hydrogen loss during high-temperature processes. By pre-loading this layer with excess hydrogen, the system creates a cushion that maintains adequate hydrogen supply to the gate electrode even when thermal processes cause hydrogen depletion, thus protecting device reliability.
Solution Approach 2:
The hydrogen rich layer acts as an intermediary between the external environment and the gate electrode. It serves as a buffer zone that maintains hydrogen concentration at the gate electrode during high-temperature processing, mediating the effect of thermal processes on hydrogen retention and ensuring continuous hydrogen supply.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the operation reliability of semiconductor devices by effectively supplying hydrogen or deuterium, addressing the deficiency caused by the addition of layers.
Implementation Method 1
a concentration of hydrogen (H) and/or deuterium (D) contained in the hydrogen rich layer is greater than a concentration of hydrogen (H) contained in the gate electrodes
Data Source
AI summary
A semiconductor device includes a hydrogen rich layer interposed between a common source layer and an uppermost one of gate electrodes in a cell region, wherein a concentration of hydrogen (H) contained in the hydrogen rich layer is greater than a concentration of hydrogen (H) contained in the gate electrodes. Accordingly, hydrogen (H) may be effectively supplied to a channel hole during a high temperature process for forming a cell region. Thus, an issue of supply deficiency of hydrogen (H), which may occur according to an increase in the number of layers of a semiconductor device, may be improved, and operation reliability of the semiconductor device may be improved.