Hydrogen-Rich Oxide Semiconductor Layer for High Energy Density
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Solution Overview
Problem
Conventional electricity storage devices have limitations in increasing electricity storage capacity per unit volume and weight.
Innovation Solution
An electricity storage device is designed with a first oxide semiconductor layer, a first charge layer composed of an insulating material and a second oxide semiconductor, and a third oxide semiconductor layer with hydrogen content exceeding 40% by weight, forming a pn junction to enhance hydrogen storage and electrical conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional secondary battery structures are used, then the device can store electricity, but the electricity storage capacity per unit volume and weight is limited
Solution Approach 1:
The patent applies parameter changes by introducing hydrogen into the p-type oxide semiconductor layer at controlled concentrations (40-80 at%). This changes the electrical and optical properties of the material, enabling it to function as both a semiconductor and a hydrogen storage medium, thereby increasing electricity storage capacity per unit volume without significantly increasing device volume
Solution Approach 2:
The patent uses composite materials by combining n-type oxide semiconductor, p-type oxide semiconductor with hydrogen, and insulating materials in a layered structure. The hydrogen-containing p-type oxide semiconductor layer serves multiple functions: electrical conduction, optical absorption, and hydrogen storage, enabling higher electricity storage density in a compact volume
2Quantity of substance
If conventional secondary battery structures are used, then the device can store electricity, but the electricity storage capacity per unit weight is limited
Solution Approach 1:
The patent changes the compositional parameters of the p-type oxide semiconductor by incorporating hydrogen at 40-80 at% concentration. This creates a hydrogen-rich semiconductor material that provides both electrical functionality and high hydrogen storage capacity, increasing electricity storage per unit weight without adding significant mass
Solution Approach 2:
The hydrogen-containing p-type oxide semiconductor layer performs multiple functions simultaneously: it acts as a semiconductor for electrical conduction, an optical absorber for light harvesting, and a hydrogen storage medium. This multi-functionality increases electricity storage capacity per unit weight without requiring additional separate components that would increase device weight
3Quantity of substance
If hydrogen content in the third oxide semiconductor layer is increased to 40% or more, then electricity storage capacity increases, but the complexity of controlling hydrogen concentration and maintaining material stability increases
Solution Approach 1:
The patent systematically varies the hydrogen concentration parameter within the optimal range of 40-80 at% to achieve the desired balance between electricity storage capacity and material stability. By establishing this specific parameter range, the patent simplifies the control complexity while maximizing storage capacity
Solution Approach 2:
The patent applies local quality by creating distinct layers with different hydrogen concentrations and compositions. The third oxide semiconductor layer specifically contains 40-80 at% hydrogen, while other layers have different compositions optimized for their respective functions. This localized optimization reduces overall system complexity while achieving high storage capacity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration significantly increases the electricity storage capacity per unit volume and weight, improving discharge performance and efficiency.
Implementation Method 1
a third oxide semiconductor layer which has hydrogen and a p type oxide semiconductor, and a percentage of the hydrogen with respect to a metal constituting the oxide semiconductor is 40% by weight or more
Implementation Method 2
forming a pn junction to enhance hydrogen storage and electrical conductivity
Data Source
Figure 1
Figure 2(a)~2(b)
Figure 3~4
AI summary
The electricity storage device (30) includes: a first oxide semiconductor layer having a first conductivity-type first oxide semiconductor (14); a first charge layer (16) disposed on the first oxide semiconductor layer (14), and composed by including a first insulating material and a first conductivity-type second oxide semiconductor; and a third oxide semiconductor layer (24) disposed on the first charge layer (16). The third oxide semiconductor layer (24) has hydrogen and a second conductivity-type third oxide semiconductor, and a percentage of the hydrogen with respect to a metal constituting the third oxide semiconductor is equal to or greater than 40%. The embodiments provide an electricity storage device capable of increasing an electricity storage capacity per unit volume (weight).