Hydrogen Sensor Nanogap Transistor Amplification

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Solution Overview

Problem

Conventional hydrogen sensors face challenges in detecting low hydrogen concentrations due to low current signals, making it difficult to determine ON or OFF states, especially in hydrogen fuel cell systems and automotive applications where safety and precision are critical.

Innovation Solution

A hydrogen sensor system that connects a nanogap-based Pd thin film to an electrically stable amorphous InGaZnO thin-film transistor (a-IGZO TFT), either as an inverter-type or gate-type configuration, to amplify current signals into clear ON-OFF voltage signals, enhancing detection sensitivity and speed.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If a conventional hydrogen sensor uses a Pd thin film to detect hydrogen, then hydrogen detection is enabled, but the current signal is too low to reliably detect low hydrogen concentrations

Engineering Contradiction:
Improvehydrogen detection sensitivityVSAvoidsignal strength
Core Design Contradiction:
Measurement precisionVSLoss of information

Solution Approach 1:

The patent introduces a transistor as an intermediary device between the Pd thin film sensor and the measurement system. The transistor amplifies the weak current signal generated by the Pd thin film when exposed to hydrogen, converting it into a stronger, more detectable signal. This mediator (transistor) enables the system to detect low hydrogen concentrations that would otherwise produce signals too weak to measure reliably.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Measurement precision

If a conventional hydrogen sensor converts current signal to voltage signal, then voltage measurement is achieved, but low current signals from low hydrogen concentrations remain difficult to distinguish as ON or OFF states

Engineering Contradiction:
Improvevoltage signal detectionVSAvoidsignal clarity
Core Design Contradiction:
Measurement precisionVSLoss of information

Solution Approach 1:

The patent applies preliminary action by using the transistor to amplify the current signal before it is converted to a voltage signal for measurement. By strengthening the signal in advance (preliminary action), the system ensures that even low hydrogen concentrations produce sufficiently strong signals that can be clearly distinguished as ON or OFF states after conversion, eliminating the ambiguity present in conventional direct conversion methods.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system significantly enhances hydrogen detection sensitivity by three orders of magnitude, allowing for the detection of hydrogen concentrations as low as 0.05% and even lower concentrations by converting current signals into visible voltage signals, significantly improving detection accuracy and speed.

Implementation Method 1

a thin film made of transition metal or alloy thereof, disposed on a surface of the substrate and having a plurality of nanogaps formed therein

Methodology Applied
Scientific EffectHydrogen absorption: Absorption (physical)

Implementation Method 2

nanogaps are formed in the TF by extension of the substrate, and hydrogen is detected using the nanogaps

Methodology Applied
Scientific EffectNanogap closure:

Implementation Method 3

the hydrogen-sensing unit is connected with a source (or drain) or a gate of the transistor via a connector

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Data Source

PatentUS10203313B2Hydrogen sensor and sensor circuit
Publication Date: 2019.02.12 IND ACADEMIC COOP FOUND YONSEI UNIV
  • US10203313B2 patent drawing
  • US10203313B2 patent drawing
  • US10203313B2 patent drawing

AI summary

A hydrogen sensor includes a hydrogen-sensing unit and a transistor connected to the hydrogen-sensing unit. The hydrogen-sensing unit includes a substrate made of an elastic material, a thin film made of transition metal or alloy thereof, disposed on the surface of the substrate and having a plurality of nanogaps formed therein, and an electrode formed on the thin film. The hydrogen-sensing unit is connected with a source (or drain) or a gate of the transistor via a connector.