Hydrogen Supplementation for OLED Array Substrates

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Solution Overview

Problem

OLED display devices suffer from uneven light emission due to structural uniformity issues in low-temperature polysilicon active layers, leading to light and dark mura at different positions, which are exacerbated by hydrogen supplementation treatments that increase current differences between thin film transistors.

Innovation Solution

A method for manufacturing an array substrate involving the formation of pixel structures with specific thin film transistors, where hydrogen supplementation is performed differently for each type of transistor by creating holes in the insulating layers to control hydrogen ion concentration, thereby reducing current differences and enhancing electron mobility.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Stability of the object's composition

If hydrogen supplementation treatment is performed on all thin film transistors uniformly, then the active layer structural uniformity is improved, but the current differences between transistors increase leading to light and dark mura

Engineering Contradiction:
Improveactive layer structural uniformityVSAvoidcurrent uniformity
Core Design Contradiction:
Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The patent applies different hydrogen supplementation treatments to different transistor types based on their specific characteristics. Driving transistors receive one treatment regimen while switch transistors receive another, allowing each to achieve optimal structural uniformity without causing current imbalances. This local differentiation resolves the contradiction by tailoring the treatment to local needs rather than applying a uniform approach.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the hydrogen supplementation parameters (such as treatment time, temperature, or hydrogen concentration) depending on the transistor type. By adjusting these parameters locally for driving versus switch transistors, the method achieves improved structural uniformity while maintaining current uniformity across different transistor positions.

Inventive Principle:
Principle #35Parameter changes

2Productivity

If low-temperature polysilicon is used in active layers, then the manufacturing process is simplified and productivity is improved, but structural uniformity deteriorates causing mura defects

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidactive layer structural uniformity
Core Design Contradiction:
ProductivityVSStability of the object's composition

Solution Approach 1:

The patent applies hydrogen supplementation treatment as a preliminary action after forming the low-temperature polysilicon active layer. This treatment pre-repairs structural defects and uniformity issues before the transistors are assembled into the final device, allowing the use of simplified low-temperature processing while achieving the structural uniformity that would otherwise require more complex high-temperature processes.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the physical or chemical parameters of the active layer through hydrogen supplementation, transforming the structural properties of low-temperature polysilicon to achieve uniformity comparable to or better than high-temperature processes, thereby maintaining productivity while improving quality.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach ensures uniform light emission by reducing current differences and increasing electron mobility, minimizing the occurrence of mura in OLED display devices.

Implementation Method 1

at least one insulating layer configured to release hydrogen ions to an active layer

Methodology Applied
Scientific EffectDiffusion: Diffusion

Data Source

PatentUS11508763B2Method for manufacturing array substrate, array substrate and display device
Publication Date: 2022.11.22 BEIJING BOE TECH DEV CO LTD
  • US11508763B2 patent drawing
  • US11508763B2 patent drawing
  • US11508763B2 patent drawing

AI summary

The present disclosure provides a method for manufacturing an array substrate, an array substrate, and a display device. By first forming holes in a first thin film transistor, then simultaneously performing hydrogen supplementation on the first thin film transistor and a second thin film transistor, and then forming holes in the second thin film transistor, the first thin film transistor and the second thin film transistor can be repaired and compensated in different degrees by hydrogen supplementation.