Hydrogenated Substrate ALD for High Aspect Ratio Step Coverage
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Solution Overview
Problem
Atomic layer deposition (ALD) techniques face challenges in achieving good step coverage and conformity in high aspect ratio structures due to low throughput and degraded performance in advanced semiconductor devices.
Innovation Solution
The method involves a hydrogenation pretreatment process followed by alternating cycles of precursor and reactant gas supply in a processing chamber, utilizing plasma-enhanced ALD to form silicon nitride films with improved step coverage and conformity, specifically using SiH2Cl2 as a precursor and nitrogen and hydrogen-containing plasma as reactants, and optimizing conditions such as gas flow rates and temperatures to enhance film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional ALD is used for deposition, then film deposition is achieved, but step coverage and conformity are degraded in high aspect ratio structures
Solution Approach 1:
The substrate surface undergoes preliminary hydrogenation treatment before ALD deposition to modify surface properties. This preliminary action creates a hydrogen-terminated surface that enhances precursor adsorption and reaction efficiency, leading to improved step coverage in high aspect ratio structures while maintaining deposition rates
Solution Approach 2:
The invention changes the surface chemical state from oxidized to hydrogen-terminated by controlling the hydrogen plasma treatment parameters (power, pressure, duration). This parameter change in surface chemistry enables better precursor reactivity and uniform film deposition, resolving the contradiction between step coverage and deposition rate
2Manufacturing precision
If conventional ALD is used for deposition, then film deposition is achieved, but conformity is degraded in high aspect ratio structures
Solution Approach 1:
Hydrogen plasma treatment is applied as a preliminary step to activate the substrate surface and create uniform hydrogen termination. This preliminary action ensures consistent precursor adsorption across complex high aspect ratio structures, achieving excellent conformity without requiring excessive deposition time
Solution Approach 2:
The hydrogenated surface maintains continuous reactivity throughout the ALD process, enabling sustained high-rate deposition with excellent conformity. The hydrogen-terminated surface continuously promotes uniform precursor decomposition and film growth, reducing total deposition time while maintaining high quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly improves sidewall, bottom, and overhang step coverage, as well as conformity, achieving better film properties and increased deposition rates, with improved sidewall step coverage from 0.6 to 0.95 and bottom step coverage from 0.43 to 0.95, and conformity from 0.37 to 0.8.
Implementation Method 1
hydrogen-containing plasma is supplied to the processing chamber to convert the adsorbed precursor compound to the silicon nitride
Implementation Method 2
hydrogenizing a surface of the semiconductor substrate
Implementation Method 3
supplying a precursor to the surface of the semiconductor substrate
Implementation Method 4
supplying a reactant to the surface of the semiconductor substrate, wherein the reactant converts the adsorbed precursor compound to the silicon nitride
Data Source
AI summary
A method for manufacturing semiconductor structure is disclosed. The method includes: providing a semiconductor substrate; hydrogenizing a surface of the semiconductor substrate; supplying a precursor to the surface of the semiconductor substrate; and supplying a reactant to the surface of the semiconductor substrate. An associated method for performing an atomic layer deposition (ALD) upon a semiconductor substrate and an associated atomic layer deposition (ALD) method are also disclosed.