Hydrogenated ROMP Resist for ArF Lithography
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Solution Overview
Problem
Current resist compositions for semiconductor microfabrication using ArF excimer lasers face challenges with etching resistance and resolution due to the opacity of polyhydroxystyrene derivatives and poor development properties of poly(meth)acrylate derivatives with alicyclic structures.
Innovation Solution
A hydrogenated ring-opening metathesis polymer with an alicyclic structure and structural units incorporating alkoxymethyl ester groups is developed, providing improved etching resistance, development properties, and reduced proximity bias, suitable for high-energy radiation lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If poly(meth)acrylate derivatives with alicyclic structures are used to improve dry etching resistance, then etching resistance is improved, but development properties deteriorate due to swelling and low dissolution contrast
Solution Approach 1:
The patent uses a composite resin system combining polyhydroxystyrene derivative (providing good development properties and dissolution contrast) with poly(meth)acrylate derivative containing alicyclic structure (providing etching resistance). This composite approach allows both requirements to be satisfied simultaneously by leveraging the complementary strengths of each component.
Solution Approach 2:
The invention introduces specific functional groups at localized positions within the polymer structure. The polyhydroxystyrene derivative provides alkali-soluble groups for good development, while the poly(meth)acrylate derivative with alicyclic structure provides etching resistance. Each component maintains its local functional characteristics while contributing to overall performance.
2Ease of operation
If polyhydroxystyrene derivatives are used as base resin, then development properties are improved, but transparency to 193 nm light deteriorates due to opacity
Solution Approach 1:
The patent creates a composite resist composition where polyhydroxystyrene derivative (providing excellent development properties) is combined with poly(meth)acrylate derivative (providing 193 nm transparency). The composite system allows the polyhydroxystyrene to contribute its superior development characteristics while the overall composition maintains the required optical transparency for ArF excimer laser lithography.
3Manufacturing precision
If thinner film of resist is formed to acquire higher resolution, then maximum resolution is improved, but etching resistance deteriorates
Solution Approach 1:
The composite resin system enables thinner resist films to achieve both high resolution and sufficient etching resistance. The poly(meth)acrylate derivative with alicyclic structure provides enhanced etching resistance that compensates for the reduced film thickness, while the polyhydroxystyrene derivative maintains good development properties for high resolution patterning.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The hydrogenated ring-opening metathesis polymer enhances etching resistance and resolution, enabling finer pattern formation and reduced proximity bias in semiconductor microfabrication, particularly under ArF excimer laser exposure.
Implementation Method 1
resist composition comprising the hydrogenated ring-opening metathesis polymer as a base resin, especially suited for exposure to high-energy radiation of wavelength 300 nm or less (inclusive of excimer lasers)
Implementation Method 2
hydrogenated ring-opening metathesis polymer bearing an alicyclic structure in its backbone
Data Source
AI summary
Resist compositions comprising a hydrogenated ring-opening metathesis polymer bearing an alicyclic structure in its backbone and comprising structural units having an oxygen atom incorporated as part of the cyclic structure exhibit a high resolution and minimal proximity bias upon ArF excimer laser lithography and have high etching resistance.