Hydrophobic Coating Reduces Backside Particles in Semiconductor Processing
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Solution Overview
Problem
Conventional semiconductor processing systems face challenges with backside damage and particle formation due to electrostatic chucking forces and thermal expansion, leading to defects in subsequent processing steps.
Innovation Solution
The method involves forming a hydrophobic coating over the substrate support, using plasma treatments to deposit silicon-containing and carbon-containing materials, and controlling processing pressures to reduce stiction and particle formation, while maintaining sufficient clamping force.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrostatic chucking force is applied to retain substrate, then substrate retention is improved, but backside damage and particle generation occur
Solution Approach 1:
A release layer is introduced as an intermediary between the substrate and the chucking surface. This release layer reduces the direct adhesion between substrate and chuck, allowing substrate retention during processing while enabling easy release without backside damage or particle generation.
Solution Approach 2:
The chucking force parameters are optimized to provide sufficient retention during plasma processing while minimizing excessive force that causes backside damage. The release layer allows using lower chucking forces that are sufficient for retention but do not cause damage.
2Reliability
If electrostatic chucking force is applied to retain substrate, then substrate retention is improved, but backside particles are produced
Solution Approach 1:
The release layer acts as a mediator that prevents direct contact between the substrate backside and the chucking surface, thereby preventing particle generation from the chucking surface while maintaining substrate retention through electrostatic forces.
Solution Approach 2:
The release layer is designed to be easily removable or decomposable, allowing it to be taken out after processing. This extraction removes the source of potential backside particles while having already served its protective function during substrate retention.
3Object-affected harmful factors
If hydrophobic coating is deposited on substrate support, then stiction is reduced, but processing complexity increases
Solution Approach 1:
The surface energy parameters of the chucking surface are modified by depositing a hydrophobic coating. This changes the wettability characteristics to reduce stiction between the substrate and support, while the deposition process itself is integrated into existing processing equipment.
Solution Approach 2:
A composite structure is created with the hydrophobic coating layer deposited on the chucking surface. This composite material combines the mechanical properties of the original support with the surface properties of the hydrophobic coating, achieving reduced stiction without requiring a completely new support structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes backside damage and particle generation, enhancing the uniformity and integrity of semiconductor processing by reducing localized chucking forces and stiction between the substrate and the support.
Implementation Method 1
performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The first plasma treatment may form a plasma of an oxygen-containing precursor.
Implementation Method 2
performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The second plasma treatment may form a plasma of a fluorine-containing precursor.
Implementation Method 3
depositing a second silicon-containing material on surfaces of the processing chamber. The second plasma treatment may include forming a plasma of one or more fluorine-containing precursors.
Implementation Method 4
The first plasma treatment may form a plasma of an oxygen-containing precursor. The second plasma treatment may form a plasma of a fluorine-containing precursor.
Data Source
AI summary
Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.