Hydrophobic Resin Pattern Forming Method for Lithography DOF and EL
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Solution Overview
Problem
Existing pattern forming methods for semiconductor manufacturing suffer from deteriorated depth of focus (DOF) and exposure latitude (EL) due to limitations in resist compositions used in lithography processes.
Innovation Solution
A pattern forming method involving the use of a hydrophobic resin composition with specific characteristics, including a hydrophobic resin content of 0.01% to 30% by mass, containing fluorine, silicon, or CH3 partial structures, and a topcoat composition with fluorine atom-containing repeating units, applied in a process that includes coating, exposure, and development, to enhance DOF and EL.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions are used in lithography processes, then the manufacturing process is simple, but depth of focus (DOF) and exposure latitude (EL) are deteriorated
Solution Approach 1:
The patent uses a composite resist composition containing both hydrophilic resin and hydrophobic resin components. The hydrophilic resin (e.g., polyhydroxystyrene derivatives) provides good adhesion and dissolution properties, while the hydrophobic resin (e.g., fluorinated or silicon-containing compounds) reduces film shrinkage and improves DOF and EL. This composite approach combines the advantages of different material types to achieve superior lithographic performance.
Solution Approach 2:
The patent modifies the chemical composition parameters of the resist by incorporating specific hydrophobic resin components with controlled concentrations (0.01-30% by mass). By adjusting the content of fluorine atoms, silicon atoms, or CH3 partial structures in the resist composition, the patent optimizes the balance between film stability during exposure and development properties, thereby improving DOF and EL without excessive complexity.
2Manufacturing precision
If hydrophobic resin is added to resist composition to improve DOF and EL, then film shrinkage is inhibited, but the resist composition becomes more complex
Solution Approach 1:
The patent introduces hydrophobic resin components with specific local chemical structures (fluorine atoms, silicon atoms, or CH3 partial structures in side chains) that locally modify the resist film properties. These localized hydrophobic regions specifically inhibit film shrinkage during exposure while maintaining overall composition simplicity through targeted molecular design rather than complex multi-component systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method improves DOF and EL by inhibiting film shrinkage and acid diffusion, leading to better contrast and resolution in the resist pattern, thereby enhancing the quality of semiconductor manufacturing processes.
Implementation Method 1
the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin
Implementation Method 2
improves DOF and EL by inhibiting film shrinkage and acid diffusion
Data Source
AI summary
The present invention has an object to provide a pattern forming method capable of providing good DOF and EL, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method. The pattern forming method of the present invention includes a step a of coating an active-light-sensitive or radiation-sensitive resin composition onto a substrate to form a resist film, a step b of coating a composition for forming an upper layer film onto the resist film to form an upper layer film on the resist film, a step c of exposing the resist film having the upper layer film formed thereon, and a step d of developing the exposed resist film using a developer to form a pattern, in which the active-light-sensitive or radiation-sensitive resin composition contains a hydrophobic resin.