Hypervalent Iodine Resist Composition for Fine Pitch Patterning
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Solution Overview
Problem
Current semiconductor device fabrication methods face challenges in achieving precise patterning and high accuracy, particularly in forming fine pitch patterns, due to limitations in the efficiency and accuracy of exposure processes using traditional photoresist compositions.
Innovation Solution
A resist composition incorporating a hypervalent iodine compound, which serves as either an additive or a photo-acid generator, enhances the transfer efficiency of secondary electrons during exposure, improving patterning precision and accuracy by absorbing light and generating hydrogen ions, thereby accelerating the exposure process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional photoresist compositions are used in exposure processes, then the manufacturing process is simpler, but the patterning precision and fine pitch pattern accuracy deteriorate
Solution Approach 1:
The patent uses a composite resist composition containing multiple components including a polymer, photo-acid generator, and various additives in specific concentration ranges. This composite formulation enhances patterning precision by combining the functions of different materials to achieve superior resolution and pattern fidelity compared to traditional single-component photoresists.
Solution Approach 2:
The patent optimizes specific parameters of the resist composition including the concentration of photo-acid generator (0.1-10 wt%), polymer molecular weight (10,000-1,000,000), and glass transition temperature (50-150°C). By carefully controlling these parameters, the resist achieves improved patterning precision and fine pitch pattern accuracy while maintaining manufacturability.
2Manufacturing precision
If traditional photoresist compositions are used, then the composition is easier to manufacture, but the fine pitch pattern accuracy and exposure efficiency deteriorate
Solution Approach 1:
The patent specifies optimized parameter ranges for the resist composition including polymer weight average molecular weight (10,000-1,000,000), glass transition temperature (50-150°C), and photo-acid generator concentration (0.1-10 wt%). These parameter optimizations enable fine pitch pattern accuracy while the ranges are set to facilitate practical manufacturing and formulation.
3Productivity
If conventional resist compositions are used, then the process is faster and simpler, but the exposure efficiency and patterning accuracy deteriorate
Solution Approach 1:
The patent employs a composite resist system with polymer, photo-acid generator, and multiple additives that work synergistically to improve exposure efficiency. The composite formulation enables more effective light absorption and chemical amplification, resulting in higher productivity and exposure efficiency without sacrificing patterning accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of hypervalent iodine compounds in the resist composition leads to increased precision and accuracy in pattern formation, enabling the creation of fine pitch patterns with improved efficiency and stability in various chemical and thermal environments.
Implementation Method 1
enhances the transfer efficiency of secondary electrons during exposure, improving patterning precision and accuracy by absorbing light and generating hydrogen ions
Implementation Method 2
absorbing light and generating hydrogen ions, thereby accelerating the exposure process
Data Source
AI summary
Disclosed are resist compositions and semiconductor device fabrication methods wing the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R1 to R7 are as defined herein.