IBC Solar Cell Rear-Surface Texturing for Light Trapping
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Solution Overview
Problem
The light absorption efficiency on the rear surface of interdigitated back contact (IBC) solar cells is limited, hindering the improvement of conversion efficiency.
Innovation Solution
A solar cell design with P-type and N-type conductive regions on the rear surface featuring alternating first and second texture structures, including a first notch region with a distinct shape and a second texture structure in the gap region, covered by passivation layers with electrodes forming ohmic contacts.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the IBC cell adopts an entire backside electrode design, then the passivation of the front surface and light-trapping structure are optimized, but the light absorption efficiency on the rear surface is limited
Solution Approach 1:
The rear surface is segmented into multiple functional regions: P-type conductive regions, N-type conductive regions, gap regions, first notch regions, and second texture structures. This segmentation allows each region to serve its specific function - conductive regions for charge collection, gap regions for light trapping, and texture structures for enhanced light absorption - thereby resolving the contradiction between maintaining good passivation and improving rear surface light absorption efficiency
Solution Approach 2:
Different regions on the rear surface are given different local qualities and functions. The P-type and N-type conductive regions provide electrical contact, while the gap regions and texture structures provide enhanced light trapping. The first notch regions with different shape textures create localized light scattering and trapping effects. This local differentiation enables simultaneous optimization of both passivation and light absorption efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances light absorption and utilization on the rear surface, improving the photoelectric conversion efficiency by increasing the effective light-trapping and reducing reflection.
Implementation Method 1
a first texture structure is formed within the first notch region... a second texture structure is formed within the gap region... Enhances light absorption and utilization on the rear surface, improving the photoelectric conversion efficiency by increasing the effective light-trapping and reducing reflection
Implementation Method 2
a first passivation layer formed over the front surface of the semiconductor substrate; a second passivation layer formed over the rear surface of the semiconductor substrate, the second passivation layer covers the P-type conductive regions, the first notch regions, the gap regions and the N-type conductive regions
Implementation Method 3
P-type conductive regions and N-type conductive regions are arranged in an alternating manner on the rear surface of the semiconductor substrate... improving the conversion efficiency of the cell
Data Source
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AI summary
A solar cell, a method for manufacturing the same and a photovoltaic module are provided. The solar cell includes: a semiconductor substrate, including a front surface and a rear surface opposite to the front surface, P-type conductive regions and N-type conductive regions are arranged in an alternating manner on the rear surface of the semiconductor substrate, and gap regions are each formed between adjacent P-type conductive region and N-type conductive region, a first notch region is formed by recessing along a first direction between the P-type conductive region and the gap region, a first texture structure is formed within the first notch region, the first direction is parallel to a direction from the gap region to the P-type conductive region, a second texture structure is formed within the gap region, and a shape of the second texture structure is different from a shape of the first texture structure; a first passivation layer formed over the front surface of the semiconductor substrate; and a second passivation layer formed over the rear surface of the semiconductor substrate, the second passivation layer covers the P-type conductive regions, the first notch regions, the gap regions and the N-type conductive regions.