Integrated Circuit Air-Gap Routing for Parasitic Capacitance

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Solution Overview

Problem

As semiconductor process technology advances, parasitic capacitances increase due to decreasing intervals between conductive patterns, necessitating the use of air-gap technology to reduce these capacitances and improve operational speed without significantly increasing manufacturing costs.

Innovation Solution

A computer-implemented method for manufacturing an integrated circuit involves selecting timing critical nets and pre-routing them with an air-gap layer, while routing unselected nets without air-gap layers, thereby reducing parasitic capacitance and enhancing operational speed without extensive use of air-gap layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If air-gap layers are extensively used to reduce parasitic capacitance, then operational speed is improved, but manufacturing cost increases

Engineering Contradiction:
Improveoperational speedVSAvoidmanufacturing cost
Core Design Contradiction:
SpeedVSEase of manufacture

Solution Approach 1:

The patent applies air-gap layers selectively only to timing critical nets rather than uniformly across all conductive patterns. This local application reduces parasitic capacitance where it most impacts performance while avoiding the increased manufacturing costs associated with extensive air-gap layer implementation across the entire circuit.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent implements air-gap layers partially - specifically for timing critical nets that require performance optimization - rather than applying them excessively to all nets. This partial action achieves the necessary operational speed improvement while minimizing the additional manufacturing complexity and cost.

Inventive Principle:
Principle #16Partial or excessive action

2Object-generated harmful factors

If air-gap layers are used for all nets, then parasitic capacitance is reduced, but device complexity increases

Engineering Contradiction:
Improveparasitic capacitanceVSAvoiddevice complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The patent reduces parasitic capacitance locally only for timing critical nets rather than applying air-gap layers to all nets. This targeted approach eliminates the harmful parasitic capacitance effect where it matters most while avoiding the increased device complexity that would result from universal air-gap layer implementation.

Inventive Principle:
Principle #3Local quality

3Area of stationary object

If standard cells are placed with small intervals, then area is reduced, but parasitic capacitance increases

Engineering Contradiction:
Improvechip areaVSAvoidparasitic capacitance
Core Design Contradiction:
Area of stationary objectVSObject-generated harmful factors

Solution Approach 1:

The patent maintains small intervals between standard cells to reduce chip area while compensating for increased parasitic capacitance by applying air-gap layers selectively to timing critical nets. This local compensation approach allows dense cell placement without suffering from the full penalty of increased parasitic capacitance across the entire circuit.

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach improves the operational speed of semiconductor chips by reducing parasitic capacitance while minimizing manufacturing costs associated with air-gap layer implementation.

Implementation Method 1

Since air has a small dielectric constant, a parasitic capacitance may be reduced by an air gap pattern

Methodology Applied
Scientific EffectDielectric constant: Dielectric

Data Source

PatentUS10418354B2Integrated circuit and computer-implemented method of manufacturing the same
Publication Date: 2019.09.17 SAMSUNG ELECTRONICS CO LTD
  • US10418354B2 patent drawing
  • US10418354B2 patent drawing
  • US10418354B2 patent drawing

AI summary

A computer-implemented method of manufacturing an integrated circuit includes placing a plurality of standard cells that define the integrated circuit, selecting a timing critical path from among a plurality of timing paths included in the placed standard cells, and selecting at least one net from among a plurality of nets included in the timing critical path as at least one timing critical net. The method further includes pre-routing the at least one timing critical net with an air-gap layer, routing unselected nets, generating a layout using the pre-routed at least one timing critical net and the routed unselected nets, and manufacturing the integrated circuit based on the layout.