IC Air Gaps with Graphene Protective Layer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current integrated circuit structures face challenges with contamination of air gaps and complex processing steps in manufacturing, leading to potential malfunction and increased RC losses due to residual dielectric materials and lengthy processing times.
Innovation Solution
An integrated circuit structure with air gaps between interconnecting structures, covered by a planar protective layer comprising a sheltering film made from two-dimensional materials like graphene and hexagonal boron nitride, which seals the gaps and prevents contamination, along with a supporting film for mechanical strength, simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If air gaps are formed between interconnecting structures to reduce parasitic capacitance, then RC losses are reduced, but the air gaps are susceptible to contamination from manufacturing processes
Solution Approach 1:
A thin film protective layer is deposited over the air gaps between interconnecting structures. This protective layer acts as a barrier that prevents contamination from entering the air gaps during manufacturing processes, while maintaining the low dielectric constant properties of the air gaps for reducing parasitic capacitance and RC losses.
Solution Approach 2:
The protective layer creates an inert environment over the air gaps, isolating them from contaminants in the manufacturing environment. This allows the air gaps to maintain their purity and electrical properties throughout the manufacturing process without direct exposure to potentially contaminating materials.
2Manufacturing precision
If sacrificial materials are used to form air gaps, then air gaps can be created, but the process requires many processing steps and long processing time
Solution Approach 1:
The patent extracts the protective layer formation step from the traditional sacrificial material process. Instead of depositing sacrificial materials and then removing them through multiple processing steps, the invention directly deposits the protective layer to form the air gaps, eliminating the need for sacrificial material deposition and removal steps.
Solution Approach 2:
The protective layer is deposited in advance as the final structure, rather than using sacrificial materials that need to be removed later. This preliminary action of forming the protective layer directly as the air gap-defining structure eliminates subsequent removal steps and reduces overall processing time.
3Reliability
If dielectric materials are used to enclose air gaps, then air gaps can be formed, but residual dielectric materials may contaminate the air gaps
Solution Approach 1:
A thin film protective layer is deposited conformally over the air gaps and interconnecting structures. This thin film acts as a seal that prevents residual dielectric materials and other contaminants from entering the air gaps, while maintaining the air gaps' electrical isolation properties.
Solution Approach 2:
The protective layer creates a sealed inert environment over the air gaps, preventing contamination from residual dielectric materials deposited during subsequent manufacturing processes. This ensures the air gaps remain pure and maintain their intended electrical properties.
Data Source
AI summary
Provided is an integrated circuit structure and a method for manufacturing the same. The integrated circuit structure comprises a substrate; a plurality of interconnecting structures on the substrate, each of the interconnecting structures comprises side surfaces and a top surface, the side surfaces directly define air gaps therebetween isolating the interconnecting structures from each other; and a planar protective layer on top of the plurality of interconnecting structures covering all of the air gaps. The protective layer comprises a sheltering film and a supporting film.