IC Cell Layout Using Edge MD Regions for Higher Gate Density
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current integrated circuit (IC) layout designs face challenges in reducing cell width and increasing gate density, as existing approaches often result in wider cells when abutting cells with dummy gate regions, which limits the packing efficiency and functionality in a given chip area.
Innovation Solution
The proposed solution involves arranging conductive regions (MD regions) on the edges of cells instead of dummy gate regions, allowing for direct abutment and reduced cell width, and using filler cells to manage voltage variations, thereby achieving narrower cell widths and higher gate density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dummy gate regions are used to abut cells, then cell operation is maintained, but cell width increases and gate density decreases
Solution Approach 1:
The patent removes dummy gate regions from cell boundaries and replaces them with conductive regions. This extraction eliminates the unnecessary structural element that was consuming space while maintaining the essential electrical connection function through the conductive regions, thereby reducing cell width without compromising operation.
Solution Approach 2:
The conductive regions serve multiple functions: they provide electrical connections for cell operation and simultaneously enable direct abutment between cells. By making the conductive regions multi-functional, the patent eliminates the need for separate dummy gate structures, achieving both operational reliability and reduced cell width.
2Reliability
If dummy gate regions are used at cell edges, then electrical connections are maintained, but gate density and packing efficiency are reduced
Solution Approach 1:
The conductive regions are designed to perform dual functions: maintaining electrical connections and enabling direct cell abutment. This multi-functionality eliminates the need for separate dummy gate structures, thereby increasing gate density while preserving electrical connection reliability.
Solution Approach 2:
The patent changes the physical and functional parameters of the edge regions by replacing dummy gate structures with conductive regions. This parameter change transforms the edge regions from space-consuming structural elements to compact electrical connection points, thereby increasing gate density.
3Stability of the object's composition
If wider cells are used to accommodate dummy gate regions, then cell stability is maintained, but chip area utilization decreases
Solution Approach 1:
By extracting dummy gate regions from cell boundaries and replacing them with compact conductive regions, the patent reduces cell width while maintaining structural stability. This extraction allows for more efficient packing of cells on the chip, improving overall area utilization.
Solution Approach 2:
The patent shifts the electrical connection function from a two-dimensional dummy gate structure to a more compact conductive region configuration. This dimensional optimization allows cells to be packed more tightly in the planar layout, improving chip area utilization while maintaining connection integrity.
Data Source
AI summary
An integrated circuit (IC) device includes first to fourth circuits configured to perform corresponding functions. The first to fourth circuits correspondingly include first to fourth active regions extending along a first direction, and further include a plurality of gate regions extending along a second direction transverse to the first direction. Adjacent gate regions among the plurality of gate regions are spaced from each other along the first direction by one gate region pitch. The first active region and the second active region correspondingly have a first source/drain region and a second source/drain region spaced from each other, along the first direction, by one gate region pitch. The first source/drain region is a drain region. The plurality of gate regions includes a dummy gate region between the first source/drain region and the second source/drain region. The third active region and the fourth active region share a common source region.