Integrated Circuit Chip High-Voltage Junction Terminal Bootstrap
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Solution Overview
Problem
Conventional high voltage integrated circuit chips require external discrete bootstrap diodes for voltage bootstrap, increasing design complexity, cost, and difficulty in integration, making it challenging to provide an integrated solution for high-voltage gate driving circuits.
Innovation Solution
An integrated circuit chip with a high-voltage island and a high-voltage junction terminal that includes a depletion mode MOS and a bipolar transistor, eliminating the need for external bootstrap diodes by using the depletion mode MOS as a bootstrap device, which is integrated within the chip.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If external discrete bootstrap diodes are used for voltage bootstrap in high voltage integrated circuit chips, then the bootstrap function can be achieved, but the design complexity, cost, and difficulty of integration increase
Solution Approach 1:
The patent merges the bootstrap diode function with the high-voltage junction terminal structure by integrating a depletion mode MOS device into the junction terminal. The source of the depletion mode MOS connects to the high-side power source terminal, the drain connects to the floating power source terminal, and the gate connects to a biasing circuit, thereby combining what were previously separate external components into a single integrated structure that performs both high-voltage junction termination and voltage bootstrap functions
Solution Approach 2:
The high-voltage junction terminal is given multiple functions: it maintains its original role in withstanding high voltage while simultaneously incorporating the bootstrap diode function through the integrated depletion mode MOS device. This multi-functional design eliminates the need for separate external bootstrap diodes and reduces the number of components required in the high voltage gate driving circuit
2Reliability
If external discrete bootstrap diodes are used for voltage bootstrap, then the bootstrap function can be achieved, but the integration difficulty increases
Solution Approach 1:
The patent merges the bootstrap diode function with the high-voltage junction terminal structure by integrating a depletion mode MOS device into the junction terminal. The source of the depletion mode MOS connects to the high-side power source terminal, the drain connects to the floating power source terminal, and the gate connects to a biasing circuit, thereby combining what were previously separate external components into a single integrated structure that performs both high-voltage junction termination and voltage bootstrap functions
Solution Approach 2:
The patent changes the operational parameters of the depletion mode MOS device to enable bootstrap functionality. By configuring the gate voltage through the biasing circuit and utilizing the MOS device's ability to operate in depletion mode, the structure achieves voltage boosting capability inherent to MOS devices, transforming the high-voltage junction terminal into a multi-functional component
3Reliability
If external discrete bootstrap diodes are used, then the bootstrap function can be achieved, but the cost increases
Solution Approach 1:
The patent merges the bootstrap diode function with the high-voltage junction terminal structure by integrating a depletion mode MOS device into the junction terminal. The source of the depletion mode MOS connects to the high-side power source terminal, the drain connects to the floating power source terminal, and the gate connects to a biasing circuit, thereby combining what were previously separate external components into a single integrated structure that performs both high-voltage junction termination and voltage bootstrap functions
Solution Approach 2:
The high-voltage junction terminal is given multiple functions: it maintains its original role in withstanding high voltage while simultaneously incorporating the bootstrap diode function through the integrated depletion mode MOS device. This multi-functional design eliminates the need for separate external bootstrap diodes and reduces the number of components required in the high voltage gate driving circuit
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution simplifies the design, reduces costs, and improves integration by eliminating the need for external components, while maintaining high-voltage resistance without increasing the chip layout area, thus enhancing reliability and compatibility with standard processes.
Implementation Method 1
the low-side power source terminal VCC can charge the bootstrap capacitor C1 through the bootstrap diode D1 to make the potential close to the VCC and supply power to the high-side power source VB
Implementation Method 2
a bipolar transistor, a collector, and a base of the bipolar transistor are short-circuited, the collector of the bipolar transistor is connected to a power source terminal, and an emitter of the bipolar transistor is connected to the gate of the depletion mode MOS
Implementation Method 3
a high-voltage junction terminal surrounding the high voltage island, the high-voltage junction terminal including a depletion mode MOS
Data Source
AI summary
An integrated circuit chip and a manufacturing method therefor, and a gate drive circuit, the integrated circuit chip comprising: a semiconductor substrate (103), a high voltage island (101a) being formed in the semiconductor substrate (103); a high voltage junction terminal (102a), the high voltage junction terminal (102a) surrounding the high voltage island (101a), a depletion type MOS device (N1) being formed on the high voltage junction terminal (102a), a gate electrode and a drain electrode of the depletion type MOS device (N1) being short connected, and a source electrode of the depletion type MOS device (N1) being connected to a high side power supply end (VB) of the integrated circuit chip; and a bipolar transistor (Q1), a collector electrode of the bipolar transistor (Q1) being short connected to the substrate and being connected to a low side power supply end (VCC) of the integrated circuit chip, an emitter of the bipolar transistor (Q1) being connected to a gate electrode of the depletion type MOS device (N1).