Integrated Circuit Conductive Structure Recess Bonding
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Solution Overview
Problem
In deep sub-micro integrated circuit technology, the poor adhesion between low-k dielectric layers and silicon oxide dielectric layers leads to dielectric peeling, increasing the probability of short circuits and reducing the reliability and yield of devices, especially under thermal stress.
Innovation Solution
The integration of a protruding bonding portion at the bottom of a plug within the conductive structure enhances adhesion between the dielectric and low-k dielectric layers by forming a recess portion in the conductive structure, allowing the bonding portion to connect with the conductive structure, thereby reducing dielectric peeling and improving the connection between copper interconnects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If low-k dielectric layer and silicon oxide dielectric layer are formed with conventional processes, then the manufacturing process is simple, but the adhesion between layers is poor leading to dielectric peeling
Solution Approach 1:
A recess portion is formed in the conductive structure before forming the low-k dielectric layer. This preliminary structural preparation creates a mechanical interlocking feature that prevents dielectric peeling later during thermal stress testing, thereby improving adhesion without requiring complex chemical treatments or additional bonding processes.
Solution Approach 2:
The invention transitions from a planar interface between dielectric layers to a three-dimensional interlocking structure by forming a recess in the conductive layer and extending the bonding portion into it. This dimensional change from 2D to 3D connection significantly enhances adhesion strength while maintaining manufacturing simplicity.
2Reliability
If conventional plug structure is used without bonding portion extension, then the manufacturing process is straightforward, but dielectric peeling occurs under thermal stress reducing device reliability
Solution Approach 1:
The recess portion is formed in the conductive structure during the plug formation process, before the low-k dielectric layer is deposited. This preliminary action ensures that when the low-k layer is formed, the adhesion-enhancing structure is already in place, preventing dielectric peeling under subsequent thermal stress without requiring additional manufacturing steps.
3Reliability
If dielectric peeling is prevented through conventional means, then adhesion might be improved, but particle dropout and metal bridging occur increasing short circuit probability
Solution Approach 1:
By forming the recess portion and bonding structure before depositing the low-k dielectric layer, the invention creates a mechanical interlock that secures the dielectric layer in place. This prevents particle dropout during subsequent processing steps and avoids metal bridging by ensuring proper adhesion, thereby eliminating harmful effects while maintaining high adhesion strength.
Data Source
AI summary
An integrated circuit structure is provided. The integrated circuit structure includes a dielectric layer, a conductive structure, a low-k dielectric layer and a plug. The conductive structure is disposed in the dielectric layer, having a recess portion. The low-k dielectric layer is disposed on the dielectric layer. The plug is disposed in the low-k dielectric layer and has a protruding bonding portion on the bottom of the plug. The bonding portion is extended into the dielectric layer and connected to the recess portion of the conductive structure.