Integrated Circuit Contact Layout for Denser Standard Cell Routing

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Solution Overview

Problem

The miniaturization of integrated circuits poses challenges in design and manufacturing, particularly in ensuring reliable routing resources and reducing the pitch and area of standard cells while maintaining functionality and performance.

Innovation Solution

The integration of a second contact extending in two directions with an insulating region between it and the active region provides additional routing resources below upper metallization levels, reducing the need for and allowing the use of upper metallization layers as additional routing resources, thus achieving a smaller pitch and area.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the pitch and area of standard cells are reduced through miniaturization, then more functionality is provided at higher speeds with less power consumption, but design and manufacturing specifications become stricter and reliability challenges increase

Engineering Contradiction:
Improvefunctionality and speedVSAvoidreliability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent introduces a second contact extending in two directions (first direction and second direction) that overlaps with the first contact in the first direction. This multi-directional contact structure adds routing capability in additional dimensions, providing more routing resources without increasing the planar pitch or area of the standard cell, thus maintaining miniaturization benefits while improving reliability

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Area of stationary object

If additional routing resources are provided below upper metallization levels, then the pitch and area of standard cells are reduced, but the device complexity increases

Engineering Contradiction:
Improvearea of standard cellVSAvoidrouting structure complexity
Core Design Contradiction:
Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent merges the routing function into the contact structure itself by having the second contact extend in two directions and overlap with the first contact. This integration of routing capability within the existing contact geometry provides additional routing resources without requiring separate routing structures, thereby reducing area while managing complexity through functional consolidation

Inventive Principle:
Principle #5Merging (Combining)

3Length of moving object

If a second contact extending in two directions is integrated with an insulating region, then routing capabilities are enhanced and pitch is reduced, but manufacturing precision requirements increase

Engineering Contradiction:
Improvepitch of standard cellVSAvoidalignment precision
Core Design Contradiction:
Length of moving objectVSManufacturing precision

Solution Approach 1:

The patent introduces an insulating region positioned between the second contact and the active region as an intermediary element. This insulating region serves as a buffer that tolerates alignment variations during manufacturing, allowing the multi-directional contact structure to achieve reduced pitch without proportionally increasing manufacturing precision requirements

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS12393761B2Integrated circuit and method of forming the same
Publication Date: 2025.08.19 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12393761B2 patent drawing
  • US12393761B2 patent drawing
  • US12393761B2 patent drawing

AI summary

An integrated circuit includes a first and second active region, a first insulating region, and a first and second contact. The first and second active region extend in a first direction, and are on a first level. The first active region includes a first and second drain/source region. The second active region includes a third drain/source region. The first insulating region is over the first drain/source region. The first contact overlaps the third drain/source region, is electrically coupled to the third drain/source region and is located on a second level. The second contact includes a first and second portion. The first portion overlaps the first and second drain/source. The second portion overlaps the first contact, the first and third drain/source region, and the first insulating region, and is electrically coupled to the first portion, and electrically insulated from the first drain/source region.