Integrated Circuit Cooling Element for Lower Temperature Operation
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Solution Overview
Problem
Current integrated circuit technologies are optimized for maximum operating temperatures of 85° C., 100° C., or 125° C., which limits their performance and reliability, as device degradations such as biased temperature instability and dielectric breakdown occur at these high temperatures.
Innovation Solution
The integration of a cooling element that maintains the integrated circuit device at a temperature below the conventional maximum, allowing for optimized transistor and interconnect design parameters, such as reduced threshold voltages and gate lengths, to improve performance and reduce degradations, using advanced cooling systems like die liquid cooling or immersion in liquid nitrogen.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If integrated circuit devices are designed to operate at conventional maximum temperatures (85°C, 100°C, or 125°C), then manufacturing and reliability specifications are met, but device performance deteriorates and degradations such as biased temperature instability and dielectric breakdown occur
Solution Approach 1:
The patent changes the operating temperature parameter from conventional maximum temperatures (85°C, 100°C, or 125°C) to lower temperatures (e.g., 25°C or below). This parameter change enables the use of optimized transistor design parameters such as reduced gate lengths (10-20% reduction) and thinner gate dielectrics, which improve device performance and reduce degradations like biased temperature instability and dielectric breakdown while maintaining reliability through controlled thermal conditions
2Speed
If transistor design parameters are optimized for lower temperatures (reduced gate length, thinner gate dielectrics), then device performance and speed are improved, but manufacturing complexity and reliability concerns at higher temperatures increase
Solution Approach 1:
The patent applies parameter changes by reducing gate length by 10-20% and thinning gate dielectrics to achieve improved transistor switching speed and performance at lower temperatures. These parameter optimizations are enabled through advanced manufacturing techniques that can precisely control thin film thickness and feature dimensions, allowing the benefits of lower-temperature operation to be realized while managing manufacturing complexity through established semiconductor fabrication processes
3Duration of action of stationary object
If cooling elements are integrated into the device to maintain lower temperatures, then device performance and lifespan are improved, but device complexity and production costs increase
Solution Approach 1:
The patent introduces cooling elements as intermediary components that actively maintain the device temperature below conventional maximum operating temperatures. These cooling systems (such as liquid cooling channels or thermally conductive structures) serve as mediators between the heat generation within the device and the external environment, enabling the device to operate at optimized lower temperatures that extend lifespan and improve performance while managing the added complexity through integrated design
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables improved transistor and interconnect performance, reduced power consumption, and extended device lifespan by operating at lower temperatures, achieving 10-20% reductions in gate length, 10-20% thinner gate dielectrics, and up to 50 times lower transistor leakage, while also reducing area and production costs.
Implementation Method 1
a cooling element associated with the device, wherein the cooling element is configured to maintain a temperature of a circuit having the plurality of transistors and interconnect elements below a predetermined temperature
Data Source
AI summary
A device comprising a plurality of transistors; interconnect elements coupled to the plurality of transistors is described. The interconnect elements enable the transfer of signals between the plurality of transistors. The device further includes a cooling element associated with the device, wherein the cooling element is configured to maintain a temperature of a circuit having the plurality of transistors and interconnect elements below a predetermined temperature; wherein one or more parameters of the device is optimized to operate at a temperature below the predetermined temperature. A method of implementing a circuit is also described.