Integrated Circuit Device High-Permittivity Dielectric Member

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Solution Overview

Problem

Current memory devices with integrated memory cells in two or three dimensions face challenges in selecting memory cells for writing or reading data efficiently, as existing technologies struggle to optimize the selection process and reduce leakage currents while maintaining high operational stability.

Innovation Solution

The integrated circuit device incorporates a wiring selecting part with silicon pillars, a high-permittivity dielectric member, and a gate insulating film to enhance electrical control over the silicon pillars, increasing the effective gate width and reducing leakage currents, thereby stabilizing the operation and improving the on-current to off-current ratio.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a high-permittivity dielectric member is embedded between semiconductor members to increase effective gate width, then on-current increases and off-current decreases, but device complexity and manufacturing complexity increase

Engineering Contradiction:

Improveoperational stabilityVSAvoidstructure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The high-permittivity dielectric member is embedded within the existing interlayer insulating film structure, nesting the functional dielectric component within the manufacturing process flow rather than adding a separate external component. This integrates the complexity into the existing layered structure.

Inventive Principle:

Principle #7Nested doll (Nesting)

Solution Approach 2:

The high-permittivity dielectric material is selectively placed only in specific regions between adjacent semiconductor members where enhanced electrical control is needed, rather than uniformly throughout the entire device. This localized application improves reliability only where necessary.

Inventive Principle:

Principle #3Local quality

2Reliability

Engineering Contradiction:

Improveoperational stabilityVSAvoidmanufacturing steps

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The formation of the high-permittivity dielectric member is merged with the existing interlayer insulating film formation process. The dielectric material is deposited and patterned as part of the standard manufacturing sequence, combining multiple functions into integrated process steps rather than adding separate manufacturing stages.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The high-permittivity dielectric member serves multiple functions simultaneously: it acts as an insulating layer, provides electrical control enhancement by increasing effective gate width, and functions as part of the interlayer insulation structure. This multi-functionality reduces the need for separate dedicated components.

Inventive Principle:

Principle #6Universality (Multi-functionality)

3Quantity of substance

If memory cells are integrated in two or three dimensions with parallel wirings, then data storage density increases, but leakage current increases and selection efficiency decreases

Engineering Contradiction:

Improvememory cell densityVSAvoidleakage current

Core Design Contradiction:

Quantity of substanceVSObject-generated harmful factors

Solution Approach 1:

The high-permittivity dielectric member is selectively positioned between specific adjacent semiconductor members that control the same wiring, creating localized electrical control zones. This localized enhancement reduces leakage current at critical interfaces without affecting the overall high-density architecture.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The high-permittivity dielectric member acts as an intermediary between adjacent semiconductor members, providing enhanced electrical isolation and control. This intermediary structure prevents unwanted electrical interaction and leakage between neighboring memory cell components while maintaining their close proximity for high density.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration increases the on-current and decreases the off-current, stabilizing the operation of the integrated circuit device while maintaining cost-effectiveness by embedding a high-permittivity dielectric member without significantly increasing manufacturing steps.

Implementation Method 1

a first dielectric member placed between the two semiconductor members and made of a second insulating material having a higher permittivity than the first insulating material

Methodology Applied

Scientific EffectDielectric permittivity: Dielectric Permittivity

Data Source

PatentUS9287499B2Integrated circuit device

Publication Date: 2016.03.15 KIOXIA CORP

AI summary

An integrated circuit device according to an embodiment includes an electrode extending in a first direction, two semiconductor members spaced from each other in the first direction and extending in a second direction crossing the first direction, an insulating film placed between each of the two semiconductor members and the electrode and made of a first insulating material, and a first dielectric member placed between the two semiconductor members and made of a second insulating material having a higher permittivity than the first insulating material.