Semiconductor IC-Embedded Substrate Heat Dissipation Structure

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Solution Overview

Problem

Existing semiconductor IC-embedded substrates face complexity and increased manufacturing processes due to the need for both via conductors on the main and back surfaces, which complicates heat dissipation.

Innovation Solution

A semiconductor IC-embedded substrate design featuring insulating and conductor layers with a rewiring pattern connected to power supply pads, allowing heat dissipation through the main surface without thermal vias on the back surface, using a simpler structure with overlapping openings and wiring patterns for efficient heat transfer.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If both via conductors on the main surface and back surface are formed to dissipate heat, then heat dissipation property is improved, but device complexity and manufacturing process increase

Engineering Contradiction:

Improveheat dissipation propertyVSAvoidstructure complexity

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

The invention extracts the heat dissipation function from the back surface thermal via approach and relocates it to the main surface. By forming through-holes that penetrate the semiconductor IC from the main surface to the back surface, and filling these through-holes with conductive material, the patent creates a simplified thermal conduction path that eliminates the need for separate back surface thermal vias while maintaining effective heat dissipation.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The through-holes formed in the semiconductor IC serve multiple functions: they provide electrical connection between pad electrodes on the main surface and corresponding electrodes on the back surface, and simultaneously serve as thermal conduction paths for heat dissipation. This multi-functional design eliminates the need for separate structures for electrical connection and thermal management, reducing overall device complexity.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Temperature

If both via conductors on the main surface and back surface are formed to dissipate heat, then heat dissipation property is improved, but manufacturing process complexity increases

Engineering Contradiction:

Improveheat dissipation propertyVSAvoidmanufacturing process complexity

Core Design Contradiction:

TemperatureVSEase of manufacture

Solution Approach 1:

The invention merges the electrical connection function and thermal conduction function into a single through-hole structure. By forming one set of through-holes that serve both purposes, the patent eliminates the need for separate manufacturing processes for main surface vias, back surface vias, and thermal vias, thereby simplifying the overall manufacturing process while achieving effective heat dissipation.

Inventive Principle:

Principle #5Merging (Combining)

3Temperature

If thermal vias are formed on the back surface, then heat dissipation is achieved, but device structure becomes more complex

Engineering Contradiction:

Improveheat dissipationVSAvoidstructure complexity

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

Instead of forming thermal vias on the back surface as in conventional designs, the invention inverts the approach by forming through-holes from the main surface through the semiconductor IC to the back surface. This inverted structure allows the through-holes to serve as both electrical connection paths and thermal conduction paths, eliminating the need for separate back surface thermal vias and reducing structural complexity.

Inventive Principle:

Principle #13The other way round (Inversion)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration achieves high heat dissipation efficiency with a simpler structure and reduced manufacturing complexity, ensuring effective heat transfer from the semiconductor IC without the need for back-surface thermal vias.

Implementation Method 1

heat generated by the semiconductor IC is efficiently dissipated from the main surface side of the semiconductor IC through the plurality of power supply pads, rewiring pattern, first wiring pattern and second wiring pattern

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS11682628B2Semiconductor IC-embedded substrate having heat dissipation structure and its manufacturing method

Publication Date: 2023.06.20 TDK CORP

AI summary

Disclosed herein is a semiconductor IC-embedded substrate that includes insulating layers, conductor layers, and a semiconductor IC embedded in the insulating layers. The insulating layers includes first and second insulating layers. The conductor layers includes a first conductor layer having a first wiring pattern and a second conductor layer having a second wiring pattern. The semiconductor IC includes a rewiring pattern connected in common to power supply pads. The rewiring pattern is connected to the first wiring pattern via a first opening of the first insulating layer. The first wiring pattern is connected to the second wiring pattern via second openings of the second insulating layer. The first opening is greater in area than each of the second openings.